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SCMP120R40AY4N

中晶新源 SineSemi核心代理商

SiC MOSFETTO247-4L Notch

规格书下载

参数规格

车规 (Y/N): N
封装: TO247-4L Notch
结构: N
结温 Tj: 175 °C
漏源电压 VDS: 1200 V
漏极电流 ID: 62 A
栅源电压 VGS 最大: -10/+22 V
阈值电压 VGS(th) 典型: 3 V
导通电阻 RDS(ON)@18V,25°C 典型: 40 mΩ
导通电阻 RDS(ON)@18V,25°C 最大: 52 mΩ
导通电阻 RDS(ON)@18V,175°C 典型: 64 mΩ
输入电容 Ciss 典型: 1668 pF
输出电容 Coss 典型: 105 pF
反向传输电容 Crss 典型: 4 pF
总栅极电荷 Qg 典型: 62 nC
最小包装量: 30 pcs
最小订购量: 2250 pcs

封装与电路符号

SCMP120R40AY4N 封装外形、引脚配置与电路符号图 — 封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SCMP120R40AY4N

1200V N-Channel Silicon Carbide Power MOSFET

Product Summary

V_DS	R_DS(ON), typ	I_D, max
1200 V	40 mΩ @ V_GS = 18V	62 A

TO247-4L Notch

Ordering Information

Orderable Part Number	Package Type	Device Marking	Form	Quantity (pcs)
SCMP120R40AY4N	TO247-4L Notch	P120R40A	Tube	30

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Unit
Drain - Source Voltage	V_DSmax	1200	V
Gate - Source Voltage (DC)	V_GS	-10/+22	V
Gate - Source Voltage	V_GSop	-5/+18	V
Continuous Drain Current (T_C = 25°C)	I_D	62	A
Continuous Drain Current (T_C = 100°C)	I_D	44	A
Pulsed Drain Current	I_DM	155	A
Power Dissipation (T_C = 25°C)	P_D	288	W
Power Dissipation, Derate Above 25°C	P_D	1.9	W/°C
Junction & Storage Temperature Range	T_J, T_STG	-55 ~ +175	°C
Maximum Lead Temperature for Soldering, 1/8" from Case for 10 Seconds	T_L	260	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient	R_θJA	—	40	°C/W
Thermal Resistance, Junction-to-Case	R_θJC	—	0.52	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 1.0mA	1200	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 1200V, V_GS = 0V	—	1.0	100	µA
		V_DS = 1200V, V_GS = 0V, T_J = 150°C	—	5.0	100	µA
		V_DS = 1200V, V_GS = 0V, T_J = 175°C	—	10.0	—	µA
Gate-Source Leakage Current	I_GSS	V_GS = +22V, V_DS = 0V, T_J = 150°C	—	—	+100	nA
		V_GS = -10V, V_DS = 0V, T_J = 150°C	—	—	-100	nA

On Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 10mA (tested after V_GS = 22V, 1ms pulse)	2.0	3.0	4.5	V
Static Drain-Source On-Resistance	R_DS(ON)	V_GS = 18V, I_D = 28A	—	40	52	mΩ
		V_GS = 18V, I_D = 28A, T_J = 175°C	—	64	—	mΩ
		V_GS = 15V, I_D = 28A	—	56	—	mΩ
Forward Transconductance	g_fs	V_GS = 20V, I_D = 28A	—	16.9	—	S
Diodes Forward Voltage	V_SD	V_GS = -3V, I_SD = 28A	—	4.3	—	V

Dynamic Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Input Capacitance	C_iss	V_DS = 800V, V_GS = 0V, f = 250KHz	—	1668	—	pF
Output Capacitance	C_oss		—	105	—	pF
Reverse Transfer Capacitance	C_rss		—	4.0	—	pF
Stored Energy in Output Capacitance	E_oss	V_DS = 0V to 800V, V_GS = 0V	—	42	—	µJ
Internal Gate Resistance	R_G	f = 1MHz, V_AC = 30mV	—	3.0	—	Ω

Switching Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Turn-On Switching Loss	E_on	V_DS = 800V, V_GS = -3/18V, I_D = 28A, R_G = 4.7Ω	—	158	—	µJ
Turn-Off Switching Loss	E_off		—	100	—	µJ
Total Switching Loss	E_tot		—	258	—	µJ
Turn-On Delay Time	t_d(on)	V_DS = 800V, V_GS = -3/18V, I_D = 28A, R_G(ext) = 4.7Ω	—	19	—	ns
Rise Time	t_r		—	15	—	ns
Turn-Off Delay Time	t_d(off)		—	35	—	ns
Fall Time	t_f		—	8.0	—	ns

Gate Charge Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Total Gate Charge	Q_g(tot)	V_DS = 800V, V_GS = -3/18V, I_D = 28A	—	62	—	nC
Gate-Source Charge	Q_gs		—	20	—	nC
Gate-Drain Charge	Q_gd		—	14	—	nC

Drain-Source Diode Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Reverse Recovery Time	t_rr	V_R = 800V, I_SD = 28A, di/dt = 3000A/µs, Includes Q_oss	—	15	—	ns
Reverse Recovery Charge	Q_rr		—	219	—	nC
Peak Reverse Recovery Current	I_rrm		—	24	—	A
Continuous Diode Forward Current	I_S	V_GS = -3.0V	—	—	62	A
Pulsed Diode Forward Current	I_SM	V_GS = -3.0V	—	—	155	A