产品详情
SMT10T03BLAE
中晶新源 SineSemi核心代理商
晶圆/裸片Wafer
参数规格
- 工艺
- SGT
- 结构
- N
- 漏源电压 VDS
- 100 V
- 导通电阻 RDS(ON)@10V 最大
- 3.8 mΩ
- 导通电阻 RDS(ON)@10V 典型
- 3.2 mΩ
- 阈值电压 VGS(th) 典型
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 3850*2680
- Gross Die (8" wafer)
- 2694
- Wafer Thickness (μm)
- 150±15
- 栅源电压 VGS 最大
- ±20 V
- 导通电阻 RDS(ON)@4.5V 典型
- 3.8 mΩ
- 导通电阻 RDS(ON)@4.5V 最大
- 4.6 mΩ
- 输入电容 Ciss 典型
- 3066 pF
- 输出电容 Coss 典型
- 1489 pF
- 反向传输电容 Crss 典型
- 20 pF
- 总栅极电荷 Qg 典型
- 51 nC
- Qgs_Typ
- 7.9 nC
- Qgd_Typ
- 10.2 nC
- 结温 Tj
- 150 °C
- 原厂备注
- SGT N
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在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT10T03BLAE
100V N-Channel Power MOSFET (Wafer Datasheet)
Product Summary
- VDS = 100V
- RDS(ON), max = 3.2mΩ (VGS = 10V)
- RDS(ON), max = 3.8mΩ (VGS = 4.5V)
Potential Applications
- Power Management
- Motor Driving and BMS in Power Tools, E-vehicle
- High frequency switching synchronous rectification
Chip Information
| Parameter |
Value |
| Die Size (with scribe line) |
3850µm × 2860µm |
| Gate Pad Size |
280µm × 430µm |
| Source Pad Size |
Full Metalized Source |
| Scribe Line Width |
80µm |
| Wafer Thickness |
150µm ± 15µm |
| Wafer Diameter |
8 inch |
| Passivation |
Yes |
| Front Metal Composition & Thickness |
AlCu, 4µm |
| Back Metal Composition & Thickness |
Ti/Ni/Ag, 1.3µm |
| Gross Die (approximately) |
2,694 |
| Recommended Package |
PDFN5060-8L |
Ordering Information
| Orderable Part Number |
Wafer Description |
| SMT10T03BLAE |
Sampling Tested Wafer |
| SMT10T03BLAE-C |
Full CP Tested Wafer |
Maximum Ratings (@ TJ = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Units |
| Drain - Source Voltage |
VDS |
100 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Junction Temperature Range |
TJ |
-55 ~ +150 |
°C |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
100 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 100V, VGS = 0V |
— |
— |
1.0 |
µA |
| Gate-Body Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
1.2 |
1.7 |
2.5 |
V |
| Static Drain-Source On-Resistance (1) |
RDS(ON) |
VGS = 10V, ID = 20A |
— |
3.2 |
3.8 |
mΩ |
|
|
VGS = 4.5V, ID = 15A |
— |
3.8 |
4.8 |
mΩ |
| Diodes Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
Ciss |
VDS = 50V, VGS = 0V, f = 1MHz |
— |
3066 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
1486 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
20 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
1.7 |
— |
Ω |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge |
Qg |
VDS = 50V, ID = 20A |
— |
37 |
— |
nC |
| Gate-Source Charge |
Qgs |
VGS = 10V |
— |
7.9 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
10.2 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
2.9 |
— |
V |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Reverse Recovery Time |
trr |
IS = 20A, di/dt = 100A/µs |
— |
38 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
46 |
— |
nC |
Notes:
- RDS(ON) value is referred by the device assembled in PDFN5060-8L.
