SMP2305AUM 产品图

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SMP2305AUM

中晶新源 SineSemi核心代理商

中低压 MOSFETSOT-23
规格书下载

参数规格

封装
SOT-23
结构
P
漏源电压 VDS
-20 V
漏极电流 ID
-4.9 A
车规 (Y/N)
N
阈值电压 VGS(th) 典型
-0.7 V
导通电阻 RDS(ON)@4.5V 典型
27 mΩ
导通电阻 RDS(ON)@4.5V 最大
34 mΩ
栅源电压 VGS 最大
±12 V
结温 Tj
150 °C
输入电容 Ciss 典型
820 pF
输出电容 Coss 典型
114 pF
反向传输电容 Crss 典型
93 pF
总栅极电荷 Qg 典型
7.3 nC
ESD
No
最小包装量
3000 pcs
最小订购量
30000 pcs
应用推荐-通用开关
Y
导通电阻 RDS(ON)@2.5V 典型
35 mΩ
导通电阻 RDS(ON)@2.5V 最大
45 mΩ

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封装与电路符号

SMP2305AUM 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMP2305AUM

-20V P-Channel Enhancement Mode Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
-20 V 34 mΩ @ VGS = -4.5V -4.9 A
45 mΩ @ VGS = -2.5V
62 mΩ @ VGS = -1.8V

SOT-23

Features
  • Fast Switching
  • Low Gate Charge
  • Low On-Resistance
Application
  • Load Switch
  • Motor Control
  • Power Management
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMP2305AUM SOT-23 2305 7" Tape&Reel 3,000 — — — —
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS -20 V
Gate - Source Voltage VGS ±12 V
Continuous Drain Current (VGS = -4.5V) (1) ID TC = 25°C: -4.9 A
Pulsed Drain Current (2) IDM -19.5 A
Power Dissipation PD TC = 25°C: 1.1 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 85 110 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC — — °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -20 — — V
Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V — — -1.0 µA
TJ = 125°C — — -100 µA
Gate-Source Leakage Current IGSS VGS = ±12V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -0.4 -0.7 -1.0 V
Static Drain-Source On-Resistance RDS(on) VGS = -4.5V, ID = -4.1A — 27 34 mΩ
VGS = -2.5V, ID = -3.0A — 35 45 mΩ
VGS = -1.8V, ID = -2.0A — 48 62 mΩ
Forward Transconductance gfs VDS = -5.0V, ID = -4.1A — 8.0 — S
Diodes Forward Voltage VSD IS = -2.0A, VGS = 0V — -0.77 -1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = -10V, VGS = 0V, f = 1MHz — 820 — pF
Output Capacitance Coss — 114 — pF
Reverse Transfer Capacitance Crss — 93 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 22 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = -4.5V, VDS = -10V — 6.9 — ns
Rise Time tr ID = -4.1A, RGEN = 3.0Ω — 15 — ns
Turn-Off Delay Time td(off) — 72 — ns
Fall Time tf — 36 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = -4.5V) Qg VDS = -10V, ID = -4.1A — 7.3 — nC
Total Gate Charge (VGS = -2.5V) Qg — 4.2 — nC
Gate-Source Charge Qgs VGS = -4.5V — 1.0 — nC
Gate-Drain Charge Qgd — 1.6 — nC
Gate Plateau Voltage Vplateau — -1.5 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current IS TC = 25°C — — -4.9 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse.
  3. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  4. Thermal resistance from junction to the exposed pad.
  5. Short duration pulse test used to minimize self-heating effect.
  6. Defined by design, not subject to production.
SMP3415AUM漏极电流 ID-4.9 A输入电容 Ciss 典型814 pFHT036P02E导通电阻 RDS(ON)@4.5V 典型580 mΩ导通电阻 RDS(ON)@4.5V 最大850 mΩSMP3415AUL漏极电流 ID-4.8 A输入电容 Ciss 典型818 pFSMP3401AUM漏极电流 ID-4.2 A输入电容 Ciss 典型779 pFSMP3407ALM漏极电流 ID-4 A输入电容 Ciss 典型631 pFSMP3407CLMK漏极电流 ID-3.5 A输入电容 Ciss 典型394 pF