SMP3407ALM 产品图

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SMP3407ALM

中晶新源 SineSemi核心代理商

中低压 MOSFETSOT-23
规格书下载

参数规格

封装
SOT-23
结构
P
漏源电压 VDS
-30 V
漏极电流 ID
-4 A
导通电阻 RDS(ON)@10V 最大
48 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
-1.6 V
导通电阻 RDS(ON)@10V 典型
39 mΩ
导通电阻 RDS(ON)@4.5V 典型
52 mΩ
导通电阻 RDS(ON)@4.5V 最大
65 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
输入电容 Ciss 典型
631 pF
输出电容 Coss 典型
77 pF
反向传输电容 Crss 典型
62 pF
总栅极电荷 Qg 典型
12 nC
ESD
No
最小包装量
3000 pcs
最小订购量
30000 pcs
应用推荐-通用开关
Y

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封装与电路符号

SMP3407ALM 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMP3407ALM

-30V P-Channel Enhancement Mode Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
-30 V 48 mΩ @ VGS = -10V -4.0 A
65 mΩ @ VGS = -4.5V

SOT-23

Features
  • Fast Switching
  • Low Gate Charge
  • Low On-Resistance
Application
  • Load Switch
  • Motor Control
  • Power Management
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMP3407ALM SOT-23 3407 7" Tape&Reel 3,000 — — — —
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS -30 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = -10V) (1) ID TA = 25°C: -4.0 A
Pulsed Drain Current (2) IDM -16 A
Power Dissipation PD TA = 25°C: 1.1 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 85 110 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC — — °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 — — V
Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V — — -1.0 µA
TJ = 125°C — — -100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -1.6 -2.2 V
Static Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -4.0A — 39 48 mΩ
VGS = -4.5V, ID = -3.0A — 52 65 mΩ
Forward Transconductance gfs VDS = -5.0V, ID = -4.0A — 8.0 — S
Diodes Forward Voltage VSD IS = -2.0A, VGS = 0V — -0.80 -1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = -15V, VGS = 0V, f = 1MHz — 631 — pF
Output Capacitance Coss — 77 — pF
Reverse Transfer Capacitance Crss — 62 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 10 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = -10V, VDS = -15V — 3.0 — ns
Rise Time tr ID = -4.0A, RGEN = 3.0Ω — 7.7 — ns
Turn-Off Delay Time td(off) — 23 — ns
Fall Time tf — 11 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = -10V) Qg VDS = -15V, ID = -4.0A — 12 — nC
Total Gate Charge (VGS = -4.5V) Qg — 5.3 — nC
Gate-Source Charge Qgs VGS = -10V — 1.5 — nC
Gate-Drain Charge Qgd — 1.5 — nC
Gate Plateau Voltage Vplateau — -2.7 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current IS TA = 25°C — — -4.0 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse.
  3. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  4. Thermal resistance from junction to the exposed pad.
  5. Short duration pulse test used to minimize self-heating effect.
  6. Defined by design, not subject to production.
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