SMP9435ALX 产品图

产品详情

SMP9435ALX

中晶新源 SineSemi核心代理商

中低压 MOSFETSOP-8L
规格书下载

参数规格

封装
SOP-8L
结构
P
漏源电压 VDS
-30 V
漏极电流 ID
-5.1 A
导通电阻 RDS(ON)@10V 最大
43 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
-1.6 V
导通电阻 RDS(ON)@10V 典型
37 mΩ
导通电阻 RDS(ON)@4.5V 典型
48 mΩ
导通电阻 RDS(ON)@4.5V 最大
63 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
雪崩能量 EAS 最大
41 mJ
输入电容 Ciss 典型
630 pF
输出电容 Coss 典型
75 pF
反向传输电容 Crss 典型
60 pF
总栅极电荷 Qg 典型
12 nC
ESD
No
最小包装量
4000 pcs
最小订购量
40000 pcs
应用推荐-通用开关
Y

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

封装与电路符号

SMP9435ALX 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMP9435ALX

-30V P-Channel Enhancement Mode Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
-30 V 43 mΩ @ VGS = -10V -5.1 A
63 mΩ @ VGS = -4.5V

SOP-8L

Features
  • Fast Switching
  • Low Gate Charge
  • Low On-Resistance
Applications
  • Load Switch
  • Motor Control
  • Power Management
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMP9435ALX SOP-8L 9435AL 13" Tape&Reel 4,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS -30 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = -4.5V) (1) ID TA = 25°C: -5.1 A
TA = 100°C: -2.8 A
Pulsed Drain Current (2) IDM -20 A
Single Pulse Avalanche Energy (3) EAS 41 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS -15 A
Power Dissipation PD TA = 25°C: 1.3 W
TA = 100°C: 0.50 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 80 100 °C/W
Thermal Resistance, Junction-to-Ambient (5) R_θJA 58 75 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 — — V
Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V — — -1.0 µA
TJ = 125°C — — -100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.1 -1.6 -2.1 V
Static Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -5.0A — 37 43 mΩ
VGS = -4.5V, ID = -4.0A — 48 63 mΩ
Forward Transconductance gfs VDS = -5.0V, ID = -5.0A — 10 — S
Diodes Forward Voltage VSD IS = -2.0A, VGS = 0V — -0.80 -1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = -15V, VGS = 0V, f = 1MHz — 630 — pF
Output Capacitance Coss — 75 — pF
Reverse Transfer Capacitance Crss — 60 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 13 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = -10V, VDS = -15V — 2.7 — ns
Rise Time tr ID = -6.0A, RGEN = 3.0Ω — 4.0 — ns
Turn-Off Delay Time td(off) — 25 — ns
Fall Time tf — 11 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = -10V) Qg VDS = -15V, ID = -5.0A — 12 — nC
Total Gate Charge (VGS = -4.5V) Qg — 5.2 — nC
Gate-Source Charge Qgs VGS = -10V — 1.6 — nC
Gate-Drain Charge Qgd — 1.4 — nC
Gate Plateau Voltage Vplateau — -2.7 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current IS TA = 25°C — — -5.1 A

Notes:

  1. This current is chip limited, which is calculated based on RθJA.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. EAS condition, TJ=25°C, VDS=-15V, VGS=-10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area (steady state).
  5. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area (Tp = 105).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
HT022P03A导通电阻 RDS(ON)@10V 最大3.7 mΩ导通电阻 RDS(ON)@10V 典型2.8 mΩSMP3401AUL导通电阻 RDS(ON)@10V 最大45 mΩ导通电阻 RDS(ON)@10V 典型36 mΩSMP3401AUM导通电阻 RDS(ON)@10V 最大45 mΩ导通电阻 RDS(ON)@10V 典型37 mΩSMP3407ALL导通电阻 RDS(ON)@10V 最大46 mΩ导通电阻 RDS(ON)@10V 典型37 mΩSMP3407ALM导通电阻 RDS(ON)@10V 最大48 mΩ导通电阻 RDS(ON)@10V 典型39 mΩSMP3407CLMK导通电阻 RDS(ON)@10V 最大58 mΩ导通电阻 RDS(ON)@10V 典型48 mΩ