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SMP3415AUL

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中低压 MOSFETSOT23-3L

参数规格

封装
SOT23-3L
结构
P
漏源电压 VDS
-20 V
漏极电流 ID
-4.8 A
阈值电压 VGS(th) 典型
-0.7 V
导通电阻 RDS(ON)@4.5V 典型
26 mΩ
导通电阻 RDS(ON)@4.5V 最大
33 mΩ
栅源电压 VGS 最大
±8.0 V
结温 Tj
150 °C
输入电容 Ciss 典型
818 pF
输出电容 Coss 典型
114 pF
反向传输电容 Crss 典型
92 pF
总栅极电荷 Qg 典型
7.3 nC
导通电阻 RDS(ON)@2.5V 典型
34 mΩ
导通电阻 RDS(ON)@2.5V 最大
45 mΩ

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMP3415AUL

-20V P-Channel Enhancement Mode Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
-20 V 33 mΩ @ VGS = -4.5V -4.8 A
43 mΩ @ VGS = -2.5V

SOT23-3L

Features
  • Fast Switching
  • Low Gate Charge
  • Low On-Resistance
  • ESD Protected up to 2.0KV(HBM)
Applications
  • Load Switch
  • Motor Control
  • Power Management
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMP3415AUL SOT23-3L 3415 7" Tape&Reel 3,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS -20 V
Gate - Source Voltage VGS ±8.0 V
Continuous Drain Current (VGS = -4.5V) (1) ID TA = 25°C: -4.8 A
TA = 70°C: -3.8 A
Pulsed Drain Current (2) IDM -19.2 A
Power Dissipation PD TA = 25°C: 1.1 W
TA = 70°C: 0.70 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (1) R_θJA 90 115 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -20 — — V
Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V — — -1.0 µA
TJ = 125°C — — -100 µA
Gate-Source Leakage Current IGSS VGS = ±8V, VDS = 0V — — ±10 µA
On Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -0.35 -0.7 -1.0 V
Static Drain-Source On-Resistance RDS(on) VGS = -4.5V, ID = -4.1A — 26 33 mΩ
VGS = -2.5V, ID = -3.0A — 34 45 mΩ
VGS = -1.8V, ID = -2.5A — 47 84 mΩ
Forward Transconductance gfs VDS = -5.0V, ID = -4.1A — 15.0 — S
Diodes Forward Voltage VSD IS = -2.0A, VGS = 0V — -0.80 -1.2 V
Dynamic Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = -10V, VGS = 0V, f = 1MHz — 818 — pF
Output Capacitance Coss — 114 — pF
Reverse Transfer Capacitance Crss — 92 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 21 — Ω
Switching Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = -4.5V, VDS = -10V — 6.7 — ns
Rise Time tr ID = -4.1A, RGEN = 3.0Ω — 15.4 — ns
Turn-Off Delay Time td(off) — 72 — ns
Fall Time tf — 36 — ns
Gate Charge Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = -4.5V) Qg VDS = -10V, ID = -4.1A — 7.3 — nC
Total Gate Charge (VGS = -2.5V) Qg — 4.2 — nC
Gate-Source Charge Qgs VGS = -4.5V — 1.0 — nC
Gate-Drain Charge Qgd — 1.6 — nC
Gate Plateau Voltage Vplateau — -1.5 — V
Drain-Source Diode Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current IS TA = 25°C — — -4.8 A

Notes:

  1. This current is chip limited, which is calculated based on RθJA.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  4. Short duration pulse test used to minimize self-heating effect.
  5. Defined by design; not subject to production.
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