BSS123KM 产品图

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BSS123KM

中晶新源 SineSemi核心代理商

中低压 MOSFETSOT-23
规格书下载

参数规格

封装
SOT-23
结构
N
漏源电压 VDS
100 V
漏极电流 ID
0.18 A
导通电阻 RDS(ON)@10V 最大
6600 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
1.7 V
导通电阻 RDS(ON)@10V 典型
5100 mΩ
导通电阻 RDS(ON)@4.5V 典型
5400 mΩ
导通电阻 RDS(ON)@4.5V 最大
7600 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
输入电容 Ciss 典型
23 pF
输出电容 Coss 典型
8.7 pF
反向传输电容 Crss 典型
4.9 pF
总栅极电荷 Qg 典型
0.84 nC
ESD
Yes
最小包装量
3000 pcs
最小订购量
30000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-锂电池保护
Y
应用推荐-通用开关
Y

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封装与电路符号

BSS123KM 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

BSS123KM

100V N-Channel Enhancement Mode Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
100 V 6.6 Ω @ VGS = 10V 0.18 A
7.6 Ω @ VGS = 4.5V

SOT-23

Features
  • High Density Cell Design for Low RDS(ON)
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability
  • ESD Protected up to 1.0KV(HBM)
Applications
  • Load Switch for Portable Devices
  • DC/DC Converter
Mechanical Data
  • Green Molding Compound
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
BSS123KM SOT-23 B123 7" Tape&Reel 3,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 100 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 0.18 A
TA = 70°C: 0.14 A
Pulsed Drain Current (2) IDM 0.72 A
Power Dissipation (4) PD TA = 25°C: 0.48 W
TA = 70°C: 0.31 W
Junction & Storage Temperature Range TJ, TSTG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 200 260 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 — — V
Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V — — 1.0 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±10 µA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.2 1.7 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 0.17A — 5.1 6.6 Ω
Static Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 0.17A — 5.4 7.6 Ω
Forward Transconductance gfs VDS = 5.0V, ID = 0.17A — 358 — mS
Diode Forward Voltage VSD IS = 0.17A, VGS = 0V — 0.90 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 50V, VGS = 0V, f = 1MHz — 23 — pF
Output Capacitance Coss — 8.7 — pF
Reverse Transfer Capacitance Crss — 4.9 — pF
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V — 3.2 — ns
Rise Time tr ID = 0.17A, RGEN = 3.0Ω — 7.2 — ns
Turn-Off Delay Time td(off) — 15 — ns
Fall Time tf — 7.3 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 50V, ID = — — 0.84 — nC
Total Gate Charge (VGS = 4.5V) Qg VDS = 50V, ID = — — 0.43 — nC
Gate-Source Charge Qgs — 0.13 — nC
Gate-Drain Charge Qgd — 0.21 — nC
Gate Plateau Voltage Vplateau — 3.3 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current IS TC = 25°C — — 0.18 A

Notes:

  1. This current is chip limited, which is calculated based on Rthja.
  2. This current is calculated on single pulse with 10μs Single Pulse .
  3. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  4. Short duration pulse test used to minimize self-heating effect.
  5. Defined by design, not subject to production.
2N7002KM3车规 (Y/N)N阈值电压 VGS(th) 典型1.6 VBSS138KM3车规 (Y/N)N导通电阻 RDS(ON)@2.5V 最大3500 mΩ2N7002KM车规 (Y/N)N阈值电压 VGS(th) 典型1.6 V2N7002KMQ阈值电压 VGS(th) 典型1.6 V输入电容 Ciss 典型19 pFBSS138M车规 (Y/N)N导通电阻 RDS(ON)@2.5V 最大3200 mΩBSS138MQ车规 (Y/N)Y阈值电压 VGS(th) 典型1.2 V