产品详情
SMJ65R038AFY
中晶新源 SineSemi核心代理商
高压 MOSFETTO247-3L
参数规格
- 封装
- TO247-3L
- 结温 Tj
- 150 °C
- 漏源电压 VDS
- 650 V
- 漏极电流 ID
- 80 A
- 阈值电压 VGS(th) 典型
- 3.8 V
- 导通电阻 RDS(ON)@10V 典型
- 31 mΩ
- 导通电阻 RDS(ON)@10V 最大
- 38 mΩ
- 栅源电压 VGS 最大
- ±30 V
- 雪崩能量 EAS 最大
- 2025 mJ
- 输入电容 Ciss 典型
- 8100 pF
- 输出电容 Coss 典型
- 352 pF
- 反向传输电容 Crss 典型
- 10 pF
- 总栅极电荷 Qg 典型
- 133 nC
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMJ65R038AFY
600V Super Junction N-Channel Power MOSFET
Product Summary
| V_DS |
R_DS(ON), max |
I_D, max |
| 650 V |
38 mΩ @ V_GS = 10V |
80 A |
TO247-3L
Features
- Low On-Resistance
- Fast Switching Capability
- Ultra fast body diode
- 100% UIS and R_g tested
- RoHS compliant, HALOGEN FREE
Applications
- Motor Drive
- Li- Battery Protection
- Power Management for High Performance Application
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 3 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMJ65R038AFY |
TO247-3L |
65R036AF |
Tube |
30 |
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
V_DS |
650 |
V |
| Gate - Source Voltage |
V_GS |
±30 |
V |
| Continuous Drain Current (V_GS = 10V) ^(1) |
I_D |
T_A = 25°C: 80 |
A |
|
|
T_A = 100°C: 51 |
A |
| Pulsed Drain Current ^(2) |
I_DM |
240 |
A |
| Single Pulse Avalanche Energy ^(3) |
E_AS |
2025 |
mJ |
| Power Dissipation |
P_D |
T_A = 25°C: 500 |
W |
| MOSFET dv/dt Ruggedness, V_DS = 0...400V |
— |
dv/dt |
50 |
| Reverse Diodes dv/dt, V_DS = 0...400V, I_DR < I_S |
— |
dv/dt |
50 |
| Junction & Storage Temperature Range |
T_J, T_STG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient ^(4) |
R_θJA |
— |
62 |
°C/W |
| Thermal Resistance, Junction-to-Case ^(5) |
R_θJC |
— |
0.25 |
°C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = 1.0mA |
650 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
I_DSS |
V_DS = 650V, V_GS = 0V |
— |
— |
10 |
µA |
| Gate-Source Leakage Current |
I_GSS |
V_GS = ±30V, V_DS = 0V |
— |
— |
±100 |
nA |
On Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
V_GS(th) |
V_DS = V_GS, I_D = 2.0mA |
3.0 |
3.8 |
4.5 |
V |
| Static Drain-Source On-Resistance |
R_DS(on) |
V_GS = 10V, I_D = 40A (T_C = 25°C) |
— |
31 |
38 |
mΩ |
| Diodes Forward Voltage |
V_SD |
I_S = 40A, V_GS = 0V |
— |
0.90 |
— |
V |
Dynamic Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
C_iss |
V_DS = 50V, V_GS = 0V, f = 100kHz |
— |
8100 |
— |
pF |
| Output Capacitance |
C_oss |
|
— |
352 |
— |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
10 |
— |
pF |
| Effective Output Capacitance, Energy Related ^(8) |
C_o(er) |
V_DS = 0V... |
— |
200 |
— |
pF |
| Effective Output Capacitance, Time Related ^(9) |
C_o(tr) |
V_DS = 0...480V |
— |
934 |
— |
pF |
| Gate Resistance |
R_g |
V_GS = 0V, V_DS = 0V, f = 1MHz |
— |
2.5 |
— |
Ω |
Switching Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
t_d(on) |
V_GS = 10V, V_DS = 400V |
— |
27 |
— |
ns |
| Rise Time |
t_r |
I_D = 40A |
— |
8.0 |
— |
ns |
| Turn-Off Delay Time |
t_d(off) |
R_G = 5Ω |
— |
151 |
— |
ns |
| Fall Time |
t_f |
|
— |
5.0 |
— |
ns |
Gate Charge Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (V_GS = 10V) |
Q_g |
V_DS = 400V, I_D = 40A |
— |
133 |
— |
nC |
| Gate-Source Charge |
Q_gs |
|
— |
47 |
— |
nC |
| Gate-Drain Charge |
Q_gd |
Q_g = 0 to 10V |
— |
39 |
— |
nC |
| Gate Plateau Voltage |
V_plateau |
|
— |
6.0 |
— |
V |
Drain-Source Diode Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
t_rr |
I_S = 40A, di/dt = 150A/µs, V_R = 400V |
— |
155 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Q_rr |
T_J = 25°C |
— |
1.9 |
— |
µC |
| Body Diode Reverse Recovery Current |
I_RRM |
|
— |
22 |
— |
A |
| Diode Forward Current |
I_S |
T_A = 25°C |
— |
— |
80 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Defined by design, not subject to production test. T_J=25°C, V_DS=100V, V_GS=10V, L=9.5A.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to soldering point (on the exposed drain pad).
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
- C_o(er) is a fixed capacitance that gives the same stored energy as C_oss while V_DS is rising from 0 to 400V.
- C_o(tr) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 400V.
