SMJ65R022CFY 产品图

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SMJ65R022CFY

中晶新源 SineSemi核心代理商

高压 MOSFETTO247-3L
规格书下载

参数规格

车规 (Y/N)
N
封装
TO247-3L
结构
N
结温 Tj
150 °C
漏源电压 VDS
650 V
漏极电流 ID
95 A
阈值电压 VGS(th) 典型
4 V
导通电阻 RDS(ON)@10V 典型
19 mΩ
导通电阻 RDS(ON)@10V 最大
22 mΩ
栅源电压 VGS 最大
±30 V
雪崩能量 EAS 最大
1200 mJ
输入电容 Ciss 典型
8900 pF
输出电容 Coss 典型
155 pF
反向传输电容 Crss 典型
10 pF
总栅极电荷 Qg 典型
200 nC

封装与电路符号

SMJ65R022CFY 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMJ65R022CFY

650V Super Junction N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
650 V 22 mΩ @ V_GS = 10V 95 A

TO247-3L

Features
  • Low On-Resistance
  • Fast Switching Capability
  • 100% ∆V/DS & UIS & R_G Tested
  • RoHS compliant, HALOGEN FREE
Applications
  • LED Lighting
  • Charger and Adapter
  • PC and Telecom Power
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMJ65R022CFY TO247-3L 65R022CF Tube 30
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 650 V
Gate - Source Voltage V_GS ±30 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D T_C = 25°C: 95 A
T_C = 100°C: 60 A
Pulsed Drain Current ^(2) I_DM 284 A
Single Pulse Avalanche Energy ^(3) E_AS 1200 mJ
Single Pulse Avalanche Current (L = 10.0mH) I_AS 10 A
Power Dissipation P_D T_C = 25°C: 521 W
T_C = 100°C: 208.3 W
MOSFET dv/dt Ruggedness, V_DS = 0...400V dv/dt 120 V/ns
Reverse Diodes dv/dt, V_DS = 0...400V, I_SD ≤ I_D dv/dt 70 V/ns
Junction & Storage Temperature Range T_J, T_STG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 35 44 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 0.17 0.24 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ^(6)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 650 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 650V, V_GS = 0V — — 10.0 µA
T_J = 125°C — 1500 — µA
Gate-Source Leakage Current I_GSS V_GS = ±30V, V_DS = 0V — — ±100 nA
On Characteristics ^(6)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250µA 3.0 4.0 5.0 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 58.2A — 19 22 mΩ
Diodes Forward Voltage V_SD I_S = 10A, V_GS = 0V — 0.90 1.1 V
Dynamic Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss V_DS = 100V, V_GS = 0V, f = 1MHz — 8900 — pF
Output Capacitance C_oss — 155 — pF
Reverse Transfer Capacitance C_rss — 10.0 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 2.0 — Ω
Switching Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) V_GS = 10V, V_DS = 400V — 39 — ns
Rise Time t_r I_D = 58.2A, R_GEN = 27Ω — 55 — ns
Turn-Off Delay Time t_d(off) — 120 — ns
Fall Time t_f — 40 — ns
Gate Charge Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = 10V) Q_g V_DS = 480V, I_D = 58.2A, V_GS = 10V — 200 — nC
Total Gate Charge (V_GS = 8.0V) Q_g — 170 — nC
Gate-Source Charge Q_gs — 70 — nC
Gate-Drain Charge Q_gd — 76 — nC
Gate Plateau Voltage V_plateau — 8.0 — V
Drain-Source Diode Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time t_rr I_S = 58.2A, di/dt = 100A/µs, T_J = 25°C — 205 — ns
Body Diode Reverse Recovery Charge Q_rr — 1.70 — µC
Diode Forward Current I_S T_C = 25°C — — 95 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. T_J=25°C, V_DD=400V, V_GS=10V, L=50mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
SMJ30R019CFTL车规 (Y/N)N封装TOLLSMJ30R019CFY车规 (Y/N)N封装TO247-3LSMJ60R017CFY车规 (Y/N)N封装TO247-3LSMJ60R022CFY封装TO247-3L结温 Tj150 °CSMJ60R024BFY车规 (Y/N)N封装TO247-3LSMJ60R030AFY封装TO247-3L结温 Tj150 °C