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Package TO220-3L
Configuration N
VDS_Max 60 V
ID 171 A
RDS(ON)_Max @VGS=10V 3.4 mΩ
Automotive (Y/N) N
VGS(th)_Typ 1.7 V
RDS(ON)_Typ @VGS=10V 2.8 mΩ
RDS(ON)_Typ @VGS=4.5V 3.5 mΩ
RDS(ON)_Max @VGS=4.5V 4.2 mΩ
VGS_Max ±20 V
Tj 175 °C
EAS_Max 436 mJ
Ciss_Typ 2816 pF
Coss_Typ 1326 pF
Crss_Typ 77 pF
Qg_Typ 53 nC
ESD No
MPQ 1000 pcs
MOQ 5000 pcs
App: Motor Drive Y
App: Battery Protection Y
App: General Switch Y Package & Schematic Package outline · Pin configuration · Schematic (from SineSemi official datasheet) Online Datasheet Compiled from the manufacturer's datasheet; the official document prevails.
SMT6003CLS
60V N-Channel Power MOSFET
Product Summary
V_DS
R_DS(ON), max
I_D, max
— V
— mΩ @ V_GS = 10V
171 A
TO220-3L
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
Parameter
Symbol
Value
Units
Drain - Source Voltage
V_DS
60
V
Gate - Source Voltage
V_GS
±20
V
Continuous Drain Current (V_GS = 10V) ^(1)
I_D @ T_C = 25°C
171
A
I_D @ T_C = 100°C
121
A
Pulsed Drain Current ^(2)
I_DM
682
A
Single Pulse Avalanche Energy ^(3)
E_AS
436
mJ
Single Pulse Avalanche Current (L = 0.1mH)
I_AS
50
A
Power Dissipation
P_D @ T_C = 25°C
150
W
P_D @ T_C = 100°C
75
W
Junction & Storage Temperature Range
T_J, T_STG
-55~+175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Unit
Thermal Resistance, Junction-to-Ambient ^(4)
R_θJA
36
45
°C/W
Thermal Resistance, Junction-to-Case ^(5)
R_θJC
0.80
1.0
°C/W
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V_(BR)DSS
V_GS = 0V, I_D = 250µA
60
—
—
V
V_DS = 60V, V_GS = 0V
—
—
1.0
µA
Zero Gate Voltage Drain Current
I_DSS
T_J = 125°C
—
—
100
µA
Gate-Source Leakage Current
I_GSS
V_GS = ±20V, V_DS = 0V
—
—
±100
nA
On Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Gate Threshold Voltage
V_GS(th)
V_GS = V_DS, I_D = 250µA
1.2
1.7
2.5
V
Static Drain-Source On-Resistance
R_DS(on)
—
—
—
—
mΩ
Forward Transconductance
g_fs
V_DS = 5.0V, I_D = 20A
—
24
—
S
Diodes Forward Voltage
V_SD
I_S = 2.0A, V_GS = 0V
—
0.7
1.2
V
Dynamic Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Input Capacitance
C_iss
—
2816
—
pF
Output Capacitance
C_oss
V_DS = 30V, V_GS = 0V, f = 1MHz
—
1326
—
pF
Reverse Transfer Capacitance
C_rss
—
77
—
pF
Gate Resistance
R_g
V_GS = 0V, V_DS = 0V, f = 1MHz
—
1.4
—
Ω
Switching Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Turn-On Delay Time
t_d(on)
—
5.0
—
ns
Rise Time
t_r
V_DS = 30V, V_GS = 10V
—
13
—
ns
Turn-Off Delay Time
t_d(off)
I_D = 20A, R_GEN = 3.0Ω
—
46
—
ns
Fall Time
t_f
—
23
—
ns
Gate Charge Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Total Gate Charge (V_GS = 10V)
Q_g
—
53
—
nC
Total Gate Charge (V_GS = 4.5V)
Q_g
—
27
—
nC
Gate-Source Charge
Q_gs
V_DS = 30V, I_D = 20A
—
7.8
—
nC
Gate-Drain Charge
Q_gd
—
12
—
nC
Gate Plateau Voltage
V_plateau
—
2.9
—
V
Drain-Source Diode Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Body Diode Reverse Recovery Time
t_rr
I_S = 20A, di/dt = 100A/µs
—
47
—
ns
Body Diode Reverse Recovery Charge
Q_rr
T_J = 25°C
—
42
—
nC
Diode Forward Current
I_S
T_J = 25°C
—
—
125
A
Notes:
This current is chip limited, which is calculated based on Rthjc. 2. This current is calculated on single pulse with 10μs Single Pulse. 3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=30V, VGS=10V, L=1.0mH. 4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area. 5. Thermal resistance from junction to the exposed pad. 6. Short duration pulse test used to minimize self-heating effect. 7. Defined by design, not subject to production.
