SMT4002AHPWQ product image

Product Detail

SMT4002AHPWQ

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsAutomotivePDFN5060-8L-W
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Specifications

Package
PDFN5060-8L-W
Configuration
N
VDS_Max
40 V
ID
171 A
RDS(ON)_Max @VGS=10V
2.2 mΩ
Automotive (Y/N)
Y
RDS(ON)_Typ @VGS=10V
1.8 mΩ
VGS_Max
±20 V
Tj
175 °C
EAS_Max
314 mJ
Ciss_Typ
2097 pF
Coss_Typ
1194 pF
Crss_Typ
42 pF
Qg_Typ
28 nC

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT4002AHPWQ

40V N-Channel Power MOSFET

Sinesemi Automotive MOSFET — AEC-Q101 Qualified, 175°C, Wettable Flank

Product Summary
VDS RDS(ON), max ID, max
40 V 2.2 mΩ @ VGS = 10V 171 A

PDFN5060-8L-W

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT4002AHPWQ PDFN5060-8L-W 4002AHQ 13" Tape&Reel 5,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Units
Drain - Source Voltage VDS 40 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TA = 25°C 171 A
ID @ TC = 100°C 121 A
Pulsed Drain Current (2) IDM 683 A
Single Pulse Avalanche Energy (3) EAS 314 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 50 A
Power Dissipation PD @ TA = 25°C 115 W
PD @ TC = 100°C 58 W
Junction & Storage Temperature Range TJ, TSTG -55~+175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 35 43 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 1.0 1.3 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 — — V
VDS = 40V, VGS = 0V — — 1.0 µA
Zero Gate Voltage Drain Current IDSS TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 — 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 1.8 2.2 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 35 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss — 2097 2713 pF
Output Capacitance Coss VDS = 20V, VGS = 0V, f = 1MHz — 1194 1552 pF
Reverse Transfer Capacitance Crss — 42 84 pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.4 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Delay Time td(on) — 9.4 — ns
Rise Time tr VDS = 20V, VGS = 20V — 15 — ns
Turn-Off Delay Time td(off) ID = 20A, RGEN = 3.0Ω — 18 — ns
Fall Time tf — 7.8 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge (VGS = 10V) Qg — 28 36 nC
Gate-Source Charge Qgs VDS = 20V, ID = 20A — 8.3 12.5 nC
Gate-Drain Charge Qgd — 4.3 6.5 nC
Gate Plateau Voltage Vplateau — 4.4 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100A/µs — 40 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 35 — nC
Diode Forward Current IS TJ = 25°C — — 147 A

Notes:

  1. This current is chip limited, which is calculated based on Rθjc.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design; not subject to production test.
  4. Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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