SMT10T03EHT product image

Product Detail

SMT10T03EHT

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTO263-3L
Download Datasheet

Specifications

Package
TO263-3L
Configuration
N
VDS_Max
100 V
ID
211 A
RDS(ON)_Max @VGS=10V
3.5 mΩ
Automotive (Y/N)
N
VGS(th)_Typ
3 V
RDS(ON)_Typ @VGS=10V
3 mΩ
VGS_Max
±20 V
Tj
150 °C
EAS_Max
640 mJ
Ciss_Typ
4799 pF
Coss_Typ
1256 pF
Crss_Typ
50 pF
Qg_Typ
68 nC
ESD
No
MPQ
1000 pcs
MOQ
5000 pcs
App: Motor Drive
Y
App: HF Power
Y
App: Battery Protection
Y
App: General Switch
Y

Package & Schematic

SMT10T03EHT package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT10T03EHT

100V N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
100 V 3.5 mΩ @ V_GS = 10V 211 A

TO220-3L

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% ΔVDS & UIS & Rg Tested
Applications
  • DC/DC in Telecoms and Inductrial
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT10T03EHS TO220-3L 10T03EH Tube 50
SMT10T03EHT TO263-3L 10T03EH 13'' Tape&Reel 1,000
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 100 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D T_C = 25°C: 211 A
T_C = 100°C: 134 A
Pulsed Drain Current ^(2) I_DM 845 A
Single Pulse Avalanche Energy ^(3) E_AS 640 mJ
Single Pulse Avalanche Current (L = 0.1mH) I_AS 72 A
Power Dissipation ^(4) P_D T_C = 25°C: 278 W
T_C = 100°C: 111 W
Junction & Storage Temperature Range T_J, T_STG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 30 35 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 0.45 0.59 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 100 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 100V, V_GS = 0V — — 1.0 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance (TO263-3L) R_DS(on) V_GS = 10V, I_D = 20A — 3.0 3.5 mΩ
Static Drain-Source On-Resistance (TO220-3L) R_DS(on) V_GS = 10V, I_D = 20A — 3.2 3.8 mΩ
Forward Transconductance g_fs V_DS = 5.0V, I_D = 20A — 46 — S
Diode Forward Voltage V_SD I_S = 2.0A, V_GS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss V_DS = 50V, V_GS = 0V, f = 1MHz — 4799 — pF
Output Capacitance C_oss — 1256 — pF
Reverse Transfer Capacitance C_rss — 50 — pF
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) V_GS = 10V, V_DS = 50V — 10 — ns
Rise Time t_r I_D = 20A, R_GEN = 3.0Ω — 17 — ns
Turn-Off Delay Time t_d(off) — 44 — ns
Fall Time t_f — 23 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = 10V) Q_g V_DS = 50V, I_D = 20A — 68 — nC
Total Gate Charge (V_GS = 6.0V) Q_g V_DS = 50V, I_D = 20A — 44 — nC
Gate-Source Charge Q_gs — 19 — nC
Gate-Drain Charge Q_gd — 15 — nC
Gate Plateau Voltage V_plateau — 4.3 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time t_rr I_S = 20A, di/dt = 100A/µs — 62 — ns
Body Diode Reverse Recovery Charge Q_rr T_J = 25°C — 130 — nC
Diode Forward Current I_S T_C = 25°C — — 211 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10us Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=50V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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