Specifications
- Automotive (Y/N)
- N
- Package
- TO220-3L
- Configuration
- N
- Tj
- 150 °C
- VDS_Max
- 650 V
- ID_Max
- 4 A
- VGS(th)_Typ
- 3.5 V
- RDS(ON)_Typ @VGS=10V
- 1050 mΩ
- RDS(ON)_Max @VGS=10V
- 1250 mΩ
- VGS_Max
- ±30 V
- EAS_Max
- 62 mJ
- Ciss_Typ
- 235 pF
- Coss_Typ
- 25 pF
- Crss_Typ
- 6.1 pF
- Qg_Typ
- 6.1 nC
Not sure how to choose? Read the HV MOSFETs Selection Guide →
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMJ65R1K3ANS
650V Super Junction N-Channel Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 650 V |
1.25 Ω @ VGS = 10V |
4.0 A |
TO220-3L
Features
- Low On-Resistance
- Fast Switching Capability
- 100% ∆V/DS & UIS & RG Tested
- RoHS compliant, HALOGEN FREE
Applications
- LED Lighting
- Charger and Adapter
- PC and Telecom Power
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 3 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMJ65R1K3ANS |
TO220-3L |
65R1K3AN |
Tube |
50 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
650 |
V |
| Gate - Source Voltage |
VGS |
±30 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID |
TC = 25°C: 4.0 |
A |
|
|
TC = 100°C: 2.5 |
A |
| Pulsed Drain Current (2) |
IDM |
16.0 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
62 |
mJ |
| Single Pulse Avalanche Current (L = 10.0mH) |
IAS |
2.8 |
A |
| Power Dissipation |
PD |
TC = 25°C: 54 |
W |
|
|
TC = 100°C: 21.7 |
W |
| MOSFET dv/dt Ruggedness, VDS = 0...480V |
dv/dt |
50 |
V/ns |
| Reverse Diodes dv/dt, VDS = 0...480V, ISD ≤ ID |
dv/dt |
15.0 |
V/ns |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
55 |
68 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
1.8 |
2.3 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
650 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 650V, VGS = 0V |
— |
— |
1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±30V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
2.5 |
3.5 |
4.5 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 2.0A |
— |
1.05 |
1.25 |
Ω |
| Forward Transconductance |
gfs |
VDS = 5.0V, ID = 2.0A |
— |
2.9 |
— |
S |
| Diodes Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.85 |
1.2 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 50V, VGS = 0V, f = 1MHz |
— |
235 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
25 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
6.1 |
— |
pF |
| Effective Output Capacitance, Energy Related (8) |
Co(er) |
VGS = 0V, VDS = 0...480V, f = 1MHz |
— |
15.3 |
— |
pF |
| Effective Output Capacitance, Time Related (9) |
Co(tr) |
|
— |
55 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
10.0 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 400V |
— |
8.2 |
— |
ns |
| Rise Time |
tr |
ID = 2.0A, RGEN = 3.0Ω |
— |
7.7 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
19.3 |
— |
ns |
| Fall Time |
tf |
|
— |
22 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 400V, ID = 2.0A, VGS = 10V |
— |
6.1 |
— |
nC |
| Total Gate Charge (VGS = 6.0V) |
Qg |
|
— |
4.1 |
— |
nC |
| Gate-Source Charge |
Qgs |
|
— |
1.3 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
2.6 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
5.3 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = 2.0A, di/dt = 100A/µs, TJ = 25°C |
— |
137 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
|
— |
0.75 |
— |
µC |
| Body Diode Reverse Recovery Current |
IRRM |
|
— |
10.4 |
— |
A |
| Diode Forward Current |
IS |
TC = 25°C |
— |
— |
4.0 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Defined by design, not subject to production test. TJ=25°C, VDD=400V, VGS=10V, L=30mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
- Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
- Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
