产品详情
SMT6012ALAE
中晶新源 SineSemi核心代理商
参数规格
- 工艺
- SGT
- 结构
- N
- 漏源电压 VDS
- 60 V
- 导通电阻 RDS(ON)@10V 最大
- 10 mΩ
- 导通电阻 RDS(ON)@10V 典型
- 8.3 mΩ
- 阈值电压 VGS(th) 典型
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 1580*1000
- Gross Die (8" wafer)
- 17802
- Wafer Thickness (μm)
- 150±15
- 栅源电压 VGS 最大
- ±20 V
- 导通电阻 RDS(ON)@4.5V 典型
- 11.5 mΩ
- 导通电阻 RDS(ON)@4.5V 最大
- 14.4 mΩ
- 输入电容 Ciss 典型
- 596 pF
- 输出电容 Coss 典型
- 349 pF
- 反向传输电容 Crss 典型
- 19 pF
- 总栅极电荷 Qg 典型
- 11.9 nC
- Qgs_Typ
- 2 nC
- Qgd_Typ
- 2.7 nC
- 结温 Tj
- 150 °C
- 原厂备注
- SGT N
不确定怎么选？阅读《MOSFET 晶圆/裸片选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT6012ALAE
60V N-Channel Power MOSFET
Product Summary
- VDS = 60V
- RDS(ON), max = 8.3mΩ (VGS = 10V)
- RDS(ON), max = 11.5mΩ (VGS = 4.5V)
Potential Applications
- Load Switching
- Motor Driver
- High frequency switching synchronous rectification
Chip Information
| Parameter | Value |
|---|---|
| Die Size (with scribe line) | 1580µm × 1000µm |
| Gate Pad Size | 160µm × 160µm |
| Source Pad Size | Full Metalized Source |
| Scribe Line Width | 80µm |
| Wafer Thickness | 150µm ± 15µm |
| Wafer Diameter | 8 inch |
| Polyimide | Yes |
| Front Metal Composition & Thickness | AlCu, 4µm |
| Back Metal Composition & Thickness | Ti/Ni/Ag, 1.3µm |
| Gross Die (approximately) | 16,024 |
Ordering Information
| Orderable Part Number | Wafer Description |
|---|---|
| SMT6012ALAE | Sampling Tested Wafer |
| SMT6012ALAE-C | Full CP Tested Wafer |
Maximum Ratings (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain - Source Voltage | VDS | 60 | V |
| Gate - Source Voltage | VGS | ±20 | V |
| Junction Temperature Range | TJ | -55 ~ +175 | °C |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 60 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 60V, VGS = 0V | — | — | 1.0 | µA |
| Gate-Body Leakage Current | IGSS | VGS = ±20V, VDS = 0V | — | — | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250µA | 1.2 | 1.7 | 2.6 | V |
| Static Drain-Source On-Resistance (1) | RDS(on) | VGS = 10V, ID = 10A | — | 8.3 | 10.6 | mΩ |
| VGS = 4.5V, ID = 15A | — | 11.5 | 14.4 | mΩ | ||
| Diodes Forward Voltage | VSD | IS = 2.0A, VGS = 0V | — | 0.7 | 1.0 | V |
Notes:
- RDS(on) value is referred by the device assembled in PDFN5060-8L.