产品详情
SMT6012ALAE
中晶新源 SineSemi核心代理商
参数规格
- 工艺
- SGT
- 结构
- N
- 漏源电压 VDS
- 60 V
- 导通电阻 RDS(ON)@10V 最大
- 10 mΩ
- 导通电阻 RDS(ON)@10V 典型
- 8.5 mΩ
- 阈值电压 VGS(th) 典型
- 1.7 V
- With ESD
- No
- Die Size (mm²)
- 1580*1000
- Gross Die (8" wafer)
- 18024
- Wafer Thickness (mm)
- 150±15
- 栅源电压 VGS 最大
- ±20 V
- 导通电阻 RDS(ON)@4.5V 典型
- 11.6 mΩ
- 导通电阻 RDS(ON)@4.5V 最大
- 14.4 mΩ
- 输入电容 Ciss 典型
- 594 pF
- 输出电容 Coss 典型
- 301 pF
- 反向传输电容 Crss 典型
- 21 pF
- 总栅极电荷 Qg 典型
- 11.6 nC
- Qgs_Typ
- 1.84 nC
- Qgd_Typ
- 2.65 nC
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT6012ALAE
60V N-Channel Power MOSFET
Product Summary
- V_DS = 60V
- R_DS(ON), max = 8.3mΩ (V_GS = 10V)
- R_DS(ON), max = 11.5mΩ (V_GS = 4.5V)
Potential Applications
- Load Switching
- Motor Driver
- High frequency switching synchronous rectification
Chip Information
| Parameter | Value |
|---|---|
| Die Size (with scribe line) | 1580µm × 1000µm |
| Gate Pad Size | 160µm × 160µm |
| Source Pad Size | Full Metalized Source |
| Scribe Line Width | 80µm |
| Wafer Thickness | 150µm ± 15µm |
| Wafer Diameter | 8 inch |
| Polyimide | Yes |
| Front Metal Composition & Thickness | AlCu, 4µm |
| Back Metal Composition & Thickness | Ti/Ni/Ag, 1.3µm |
| Gross Die (approximately) | 16,024 |
Ordering Information
| Orderable Part Number | Wafer Description |
|---|---|
| SMT6012ALAE | Sampling Tested Wafer |
| SMT6012ALAE-C | Full CP Tested Wafer |
Maximum Ratings (@ T_J = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain - Source Voltage | V_DS | 60 | V |
| Gate - Source Voltage | V_GS | ±20 | V |
| Junction Temperature Range | T_J | -55 ~ +175 | °C |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V_(BR)DSS | V_GS = 0V, I_D = 250µA | 60 | — | — | V |
| Zero Gate Voltage Drain Current | I_DSS | V_DS = 60V, V_GS = 0V | — | — | 1.0 | µA |
| Gate-Body Leakage Current | I_GSS | V_GS = ±20V, V_DS = 0V | — | — | ±100 | nA |
| Gate Threshold Voltage | V_GS(th) | V_GS = V_DS, I_D = 250µA | 1.2 | 1.7 | 2.6 | V |
| Static Drain-Source On-Resistance ^(1) | R_DS(on) | V_GS = 10V, I_D = 10A | — | 8.3 | 10.6 | mΩ |
| V_GS = 4.5V, I_D = 15A | — | 11.5 | 14.4 | mΩ | ||
| Diodes Forward Voltage | V_SD | I_S = 2.0A, V_GS = 0V | — | 0.7 | 1.0 | V |
Notes:
- R_DS(on) value is referred by the device assembled in PDFN5060-8L.