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SMT4003DHAD

中晶新源 SineSemi核心代理商

晶圆/裸片Wafer

参数规格

工艺: SGT
结构: N
漏源电压 VDS: 40 V
导通电阻 RDS(ON)@10V 最大: 3.3 mΩ
导通电阻 RDS(ON)@10V 典型: 2.7 mΩ
阈值电压 VGS(th) 典型: 3 V
With ESD: No
Die Size (μm×μm): 2450*1450
Gross Die (8" wafer): 7691
Wafer Thickness (μm): 105±10
栅源电压 VGS 最大: ±20 V
输入电容 Ciss 典型: 1532 pF
输出电容 Coss 典型: 855 pF
反向传输电容 Crss 典型: 50 pF
总栅极电荷 Qg 典型: 18 nC
Qgs_Typ: 5.6 nC
Qgd_Typ: 2.5 nC
结温 Tj: 175 °C
原厂备注: SGT N

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT4003DHAD

40V N-Channel Power MOSFET (Wafer Datasheet)

Product Summary

V_DS = 40V
R_DS(ON), max = 2.7mΩ (V_GS = 10V)

Chip Information

Parameter	Value
Die Size (with scribe line)	2450µm × 1450µm
Gate Pad Size	360µm × 380µm
Source Pad Size	Full Metalized Source
Scribe Line Width	80µm
Wafer Thickness	100µm ± 15µm
Wafer Diameter	8 inch
Passivation	Yes
Front Metal Composition & Thickness	AlCu 4µm
Back Metal Composition & Thickness	Ti/Ni/Ag, 1.5µm
Gross Die (approximately)	7,691
Recommended Package	PDFN5060-8L

Ordering Information

Orderable Part Number	Wafer Description
SMT4003DHAD	Sampling Tested Wafer
SMT4003DHAD-C	Full CP Tested Wafer

Maximum Ratings (@ T_J = 25°C)

Parameter	Symbol	Value	Units
V_DS	V_DS	40	V
V_GS	V_GS	±20	V
T_J	T_J	-55 ~ +175	°C

Electrical Characteristics (@ T_J = 25°C)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
V_(BR)DSS	V_(BR)DSS	V_GS = 0V, I_D = 250µA	40	—	—	V
I_DSS	I_DSS	V_DS = 40V	—	—	1.0	µA
I_GSS	I_GSS	V_GS = ±20V	—	—	±100	nA
V_GS(th)	V_GS(th)	I_D = 250µA	2.0	3.0	4.0	V
R_DS(ON) ⁽¹⁾	R_DS(ON)	V_GS = 10V, I_D = 20A	—	2.7	3.3	mΩ
V_SD	V_SD	I_S = 2A	—	0.7	1.2	V

Dynamic Characteristics

C_iss=1532pF, C_oss=855pF, C_rss=30pF, R_g=3.6Ω

Gate Charge Characteristics

Q_g=18nC, Q_gs=5.6nC (V_DS=20V, I_D=20A), Q_gd=2.5nC, V_plateau=4.5V

Drain-Source Diode Characteristics

t_rr=30ns, Q_rr=19nC (I_S=20A, di/dt=100A/µs)

Notes:

R_DS(ON) value is referred by the device assembled in PDFN5060-8L.