产品详情
SMT3002ALPB
中晶新源 SineSemi核心代理商
晶圆/裸片Wafer
参数规格
- 工艺
- SGT
- 结构
- N
- 漏源电压 VDS
- 30 V
- 导通电阻 RDS(ON)@10V 最大
- 2.1 mΩ
- 导通电阻 RDS(ON)@10V 典型
- 1.8 mΩ
- 阈值电压 VGS(th) 典型
- 1.5 V
- With ESD
- No
- Die Size (μm×μm)
- 2100*1250
- Gross Die (8" wafer)
- 10572
- Wafer Thickness (μm)
- 75±10
- 栅源电压 VGS 最大
- ±20 V
- 导通电阻 RDS(ON)@4.5V 典型
- 2.5 mΩ
- 导通电阻 RDS(ON)@4.5V 最大
- 3.2 mΩ
- 输入电容 Ciss 典型
- 1437 pF
- 输出电容 Coss 典型
- 1041 pF
- 反向传输电容 Crss 典型
- 52 pF
- 总栅极电荷 Qg 典型
- 21 nC
- Qgs_Typ
- 3.8 nC
- Qgd_Typ
- 2.6 nC
- 结温 Tj
- 150 °C
- 原厂备注
- SGT With Plating
不确定怎么选？阅读《MOSFET 晶圆/裸片选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT3002ALPB
30V N-Channel Enhancement Mode Power MOSFET (Wafer Datasheet)
Product Summary
- VDS = 30V
- RDS(ON), max = 1.8mΩ (VGS = 10V)
- RDS(ON), max = 2.5mΩ (VGS = 4.5V)
Chip Information
| Parameter |
Value |
| Die Size (with scribe line) |
2100µm × 1250µm |
| Gate Pad Size |
300µm × 300µm |
| Source Pad Size |
Full Metalized Source |
| Scribe Line Width |
60µm |
| Wafer Thickness |
75µm ± 15µm |
| Wafer Diameter |
8 inch |
| Passivation |
Yes |
| Front Metal Composition & Thickness |
Ni/Pd/Au, 3.0µm/0.05µm/0.035µm |
| Back Metal Composition & Thickness |
Ti/Ni/Ag, 1.3µm |
| Gross Die (approximately) |
10,572 |
| Recommended Package |
PDFN3333-8L |
Ordering Information
| Orderable Part Number |
Wafer Description |
| SMT3002ALPB |
Sampling Tested Wafer |
| SMT3002ALPB-C |
Full CP Tested Wafer |
Maximum Ratings (@ TJ = 25°C)
| Parameter |
Symbol |
Value |
Units |
| VDS |
VDS |
30 |
V |
| VGS |
VGS |
±20 |
V |
| TJ |
TJ |
-55 ~ +150 |
°C |
Electrical Characteristics (@ TJ = 25°C)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
| V(BR)DSS |
V(BR)DSS |
VGS = 0V, ID = 10mA |
30 |
— |
— |
V |
| IDSS |
IDSS |
VDS = 24V |
— |
— |
0.5 |
mA |
| IGSS |
IGSS |
VGS = ±20V |
— |
— |
±100 |
nA |
| VGS(th) |
VGS(th) |
ID = 250µA |
1.0 |
1.3 |
2.0 |
V |
| RDS(ON) (1) |
RDS(ON) |
VGS = 10V, ID = 20A |
— |
1.8 |
2.1 |
mΩ |
|
|
VGS = 4.5V, ID = 15A |
— |
2.5 |
3.2 |
mΩ |
| VSD |
VSD |
IS = 2A |
— |
0.48 |
0.65 |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Ciss |
Ciss |
VDS = 15V, f = 1MHz |
— |
1437 |
— |
pF |
| Coss |
Coss |
|
— |
1041 |
— |
pF |
| Crss |
Crss |
|
— |
52 |
— |
pF |
| Rg |
Rg |
f = 1MHz |
— |
3.1 |
— |
Ω |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Qg |
Qg |
VDS = 15V, ID = 2.0A |
— |
21 |
— |
nC |
| Qgs |
Qgs |
|
— |
3.8 |
— |
nC |
| Qgd |
Qgd |
VGS = 10V |
— |
2.6 |
— |
nC |
| Vplateau |
Vplateau |
|
— |
2.7 |
— |
V |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| trr |
trr |
IS = 2.0A, di/dt = 100A/µs |
— |
31 |
— |
ns |
| Qrr |
Qrr |
TJ = 25°C |
— |
11.8 |
— |
nC |
Notes:
- RDS(ON) value is referred by the device assembled in PDFN3333-8L.
