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SMT20T24AHAF

中晶新源 SineSemi核心代理商

晶圆/裸片Wafer

参数规格

工艺: SGT
结构: N
漏源电压 VDS: 200 V
导通电阻 RDS(ON)@10V 最大: 22 mΩ
导通电阻 RDS(ON)@10V 典型: 18.5 mΩ
阈值电压 VGS(th) 典型: 3.4 V
With ESD: No
Die Size (μm×μm): 3900*3550
Gross Die (8" wafer): 2017
Wafer Thickness (μm): 200±20
栅源电压 VGS 最大: ±20 V
输入电容 Ciss 典型: 2363 pF
输出电容 Coss 典型: 184 pF
反向传输电容 Crss 典型: 12.1 pF
总栅极电荷 Qg 典型: 35 nC
Qgs_Typ: 11.5 nC
Qgd_Typ: 7.5 nC
结温 Tj: 175 °C
原厂备注: SGT N

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT20T24AHAF

200V N-Channel Power MOSFET (Wafer Datasheet)

Product Summary

V_DS = 200V
R_DS(ON), max = 18.5mΩ (V_GS = 10V)

Chip Information

Parameter	Value
Die Size (with scribe line)	3900µm × 3550µm
Gate Pad Size	280µm × 422µm
Source Pad Size	Full Metalized Source
Scribe Line Width	80µm
Wafer Thickness	200µm ± 25µm
Wafer Diameter	8 inch
Passivation	Yes
Front Metal Composition & Thickness	AlCu, 4µm
Back Metal Composition & Thickness	Ti/Ni/Ag, 1.5µm
Gross Die (approximately)	1,964

Ordering Information

Orderable Part Number	Wafer Description
SMT20T24AHAF	Sampling Tested Wafer
SMT20T24AHAF-C	Full CP Tested Wafer

Maximum Ratings (@ T_J = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Units
Drain - Source Voltage	V_DS	200	V
Gate - Source Voltage	V_GS	±20	V
Junction Temperature Range	T_J	-55 ~ +175	°C

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	200	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 200V, V_GS = 0V	—	—	1.0	µA
Gate-Body Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA
Gate Threshold Voltage	V_GS(th)	V_DS = V_GS, I_D = 250µA	2.5	3.4	4.5	V
Static Drain-Source On-Resistance ⁽¹⁾	R_DS(ON)	V_GS = 10V, I_D = 20A	—	18.5	22	mΩ
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.0	V

Notes:

R_DS(ON) value is referred by the device assembled in TO263-3L.