SMN3404ALM 产品图

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SMN3404ALM

中晶新源 SineSemi核心代理商

中低压 MOSFETSOT-23
规格书下载

参数规格

封装
SOT-23
结构
N
漏源电压 VDS
30 V
漏极电流 ID
5.2 A
导通电阻 RDS(ON)@10V 最大
24 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
1.6 V
导通电阻 RDS(ON)@10V 典型
19 mΩ
导通电阻 RDS(ON)@4.5V 典型
26 mΩ
导通电阻 RDS(ON)@4.5V 最大
36 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
输入电容 Ciss 典型
296 pF
输出电容 Coss 典型
61 pF
反向传输电容 Crss 典型
45 pF
总栅极电荷 Qg 典型
6.4 nC
ESD
No
最小包装量
3000 pcs
最小订购量
30000 pcs
应用推荐-通用开关
Y

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封装与电路符号

SMN3404ALM 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMN3404ALM

30V N-Channel Enhancement Mode Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
30 V 24 mΩ @ VGS = 10V 5.2 A
36 mΩ @ VGS = 4.5V

SOT-23

Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 30 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (1) ID @ TA = 25°C 5.2 A
ID @ TA = 70°C 4.2 A
Pulsed Drain Current (2) IDM 21 A
Power Dissipation PD @ TA = 25°C 1.1 W
PD @ TA = 70°C 0.69 W
Junction & Storage Temperature Range TJ, TSTG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 90 116 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 — — V
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 1.2 1.6 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5.0A — 19 24 mΩ
VGS = 4.5V, ID = 3.0A — 26 36 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 5.0A — 10.9 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.77 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 15V, VGS = 0V, f = 1MHz — 296 — pF
Output Capacitance Coss — 61 — pF
Reverse Transfer Capacitance Crss — 45 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 3.5 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 15V — 1.6 — ns
Rise Time tr ID = 20A, RGEN = 3.0Ω — 2.4 — ns
Turn-Off Delay Time td(off) — 9.1 — ns
Fall Time tf — 3.4 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 15V, ID = 20A — 6.4 — nC
Total Gate Charge (VGS = 4.5V) Qg — 3.3 — nC
Gate-Source Charge Qgs VGS = 10V — 0.82 — nC
Gate-Drain Charge Qgd — 1.4 — nC
Gate Plateau Voltage Vplateau — 2.8 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current IS TA = 25°C — — 5.2 A

Notes:

  1. This current is chip limited, which is calculated based on R_θJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed drain pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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