产品详情
SMJ65R160CNT
中晶新源 SineSemi核心代理商
高压 MOSFETTO263-3L
参数规格
- 车规 (Y/N)
- N
- 封装
- TO263-3L
- 结构
- N
- 结温 Tj
- 150 °C
- 漏源电压 VDS
- 650 V
- 漏极电流 ID
- 19 A
- 阈值电压 VGS(th) 典型
- 3.5 V
- 导通电阻 RDS(ON)@10V 典型
- 145 mΩ
- 导通电阻 RDS(ON)@10V 最大
- 160 mΩ
- 栅源电压 VGS 最大
- ±30 V
- 雪崩能量 EAS 最大
- 210 mJ
- 输入电容 Ciss 典型
- 1114 pF
- 输出电容 Coss 典型
- 68 pF
- 反向传输电容 Crss 典型
- 0.85 pF
- 总栅极电荷 Qg 典型
- 36 nC
不确定怎么选？阅读《高压 MOSFET 选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMJ65R160CNT
650V Super Junction N-Channel Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 650 V |
160 mΩ @ VGS = 10V |
19 A |
TO263-3L
Features
- Low On-Resistance
- Fast Switching Capability
- 100% ∆V/DS & UIS & RG Tested
- RoHS compliant, HALOGEN FREE
Applications
- LED Lighting
- Charger and Adapter
- PC and Telecom Power
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 3 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMJ65R160CNT |
TO263-3L |
65R160CN |
13'' Tape&Reel |
800 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
650 |
V |
| Gate - Source Voltage |
VGS |
±30 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID |
TC = 25°C: 19 |
A |
|
|
TC = 100°C: 12.0 |
A |
| Pulsed Drain Current (2) |
IDM |
78 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
210 |
mJ |
| Single Pulse Avalanche Current (L = 10.0mH) |
IAS |
6.3 |
A |
| Power Dissipation |
PD |
TC = 25°C: 169 |
W |
|
|
TC = 100°C: 67.6 |
W |
| MOSFET dv/dt Ruggedness, VDS = 0...400V |
dv/dt |
50 |
V/ns |
| Reverse Diodes dv/dt, VDS = 0...400V, ISD ≤ ID |
dv/dt |
50 |
V/ns |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
75 |
94 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
0.53 |
0.74 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
650 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 650V, VGS = 0V |
— |
— |
1.0 |
µA |
|
|
TJ = 125°C |
— |
1.0 |
— |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±30V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
3.0 |
3.5 |
4.0 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 10A |
— |
145 |
160 |
mΩ |
| Diodes Forward Voltage |
VSD |
IS = 10A, VGS = 0V |
— |
0.90 |
1.1 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 400V, VGS = 0V, f = 1MHz |
— |
1114 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
68 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
0.9 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
22.0 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 400V |
— |
23 |
— |
ns |
| Rise Time |
tr |
ID = 17A, RGEN = 27Ω |
— |
34 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
124 |
— |
ns |
| Fall Time |
tf |
|
— |
30 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 480V, ID = 10A, VGS = 10V |
— |
36 |
— |
nC |
| Total Gate Charge (VGS = 8.0V) |
Qg |
|
— |
30 |
— |
nC |
| Gate-Source Charge |
Qgs |
|
— |
8 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
18 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
6.0 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = 17A, di/dt = 100A/µs, TJ = 25°C |
— |
348 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
|
— |
5.6 |
— |
µC |
| Diode Forward Current |
IS |
TC = 25°C |
— |
— |
19 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Defined by design, not subject to production test. TJ=25°C, VDD=400V, VGS=10V, L=50mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
