SMJ60R099BFT 产品图

产品详情

SMJ60R099BFT

中晶新源 SineSemi核心代理商

高压 MOSFETTO263-3L
规格书下载

参数规格

车规 (Y/N)
N
封装
TO263-3L
结构
N
结温 Tj
150 °C
漏源电压 VDS
600 V
漏极电流 ID
32 A
阈值电压 VGS(th) 典型
3.5 V
导通电阻 RDS(ON)@10V 典型
78 mΩ
导通电阻 RDS(ON)@10V 最大
99 mΩ
栅源电压 VGS 最大
±30 V
雪崩能量 EAS 最大
562 mJ
输入电容 Ciss 典型
1684 pF
输出电容 Coss 典型
43 pF
反向传输电容 Crss 典型
13.3 pF
总栅极电荷 Qg 典型
55 nC

不确定怎么选？阅读《高压 MOSFET 选型指南》 →

封装与电路符号

SMJ60R099BFT 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMJ60R099BFT

600V Super Junction N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
600 V 99 mΩ @ VGS = 10V 32 A

TO263-3L

Features
  • Low On-Resistance
  • Fast Switching Capability
  • 100% ∆V/DS & UIS & RG Tested
  • RoHS compliant, HALOGEN FREE
Applications
  • LED Lighting
  • Charger and Adapter
  • PC and Telecom Power
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMJ60R099BFT TO263-3L 60R099BF 13'' Tape&Reel 1,000
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 600 V
Gate - Source Voltage VGS ±30 V
Continuous Drain Current (VGS = 10V) (1) ID TC = 25°C: 32 A
TC = 100°C: 20.3 A
Pulsed Drain Current (2) IDM 63 A
Single Pulse Avalanche Energy (3) EAS 562 mJ
Single Pulse Avalanche Current (L = 10.0mH) IAS 7.0 A
Power Dissipation PD TC = 25°C: 250 W
TC = 100°C: 100.0 W
MOSFET dv/dt Ruggedness, VDS = 0...400V dv/dt 50 V/ns
Reverse Diodes dv/dt, VDS = 0...400V, ISD ≤ ID dv/dt 50 V/ns
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 50 65 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.4 0.5 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 600 — — V
Zero Gate Voltage Drain Current IDSS VDS = 480V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 3.5 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 10A — 78 99 mΩ
Diodes Forward Voltage VSD IS = 10A, VGS = 0V — 0.8 1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 100V, VGS = 0V, f = 1MHz — 1684 — pF
Output Capacitance Coss — 43 — pF
Reverse Transfer Capacitance Crss — 13.3 — pF
Effective Output Capacitance, Energy Related (8) Co(er) VGS = 0V, VDS = 0...480V, f = 1MHz — 70 — pF
Effective Output Capacitance, Time Related (9) Co(tr) — 529 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 9.2 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 400V — 91 — ns
Rise Time tr ID = 10A, RGEN = 25Ω — 9.7 — ns
Turn-Off Delay Time td(off) — 7.4 — ns
Fall Time tf — 8.2 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 400V, ID = 10A, VGS = 10V — 55 — nC
Total Gate Charge (VGS = 8.0V) Qg — 46 — nC
Gate-Source Charge Qgs — 11.6 — nC
Gate-Drain Charge Qgd — 26 — nC
Gate Plateau Voltage Vplateau — 6.2 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 10A, di/dt = 100A/µs, TJ = 25°C — 91 — ns
Body Diode Reverse Recovery Charge Qrr — 0.55 — µC
Body Diode Reverse Recovery Current IRRM — 11.8 — A
Diode Forward Current IS TC = 25°C — — 29 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. TJ=25°C, VDD=400V, VGS=10V, L=50mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
  8. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
  9. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
SMJ60R130BFT漏极电流 ID23 A导通电阻 RDS(ON)@10V 典型114 mΩSMJ65R099CFTS漏极电流 ID31 A导通电阻 RDS(ON)@10V 典型87 mΩSMJ65R140BFT漏极电流 ID21 A导通电阻 RDS(ON)@10V 典型132 mΩSMJ65R140CFT漏极电流 ID24 A导通电阻 RDS(ON)@10V 典型112 mΩSMJ65R160CNT漏极电流 ID19 A导通电阻 RDS(ON)@10V 典型145 mΩSMJ65R190BNT漏极电流 ID20 A导通电阻 RDS(ON)@10V 典型169 mΩ