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SMJ60R065AFS

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高压 MOSFETTO220-3L

参数规格

封装
TO220-3L
结温 Tj
150 °C
漏源电压 VDS
600 V
漏极电流 ID
55 A
阈值电压 VGS(th) 典型
3.9 V
导通电阻 RDS(ON)@10V 典型
58 mΩ
导通电阻 RDS(ON)@10V 最大
65 mΩ
栅源电压 VGS 最大
±30 V
雪崩能量 EAS 最大
1000 mJ
输入电容 Ciss 典型
2990 pF
输出电容 Coss 典型
125 pF
反向传输电容 Crss 典型
5 pF
总栅极电荷 Qg 典型
73 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMJ60R065AFS

600V Super Junction N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
600 V 65 mΩ @ VGS = 10V 55 A

TO220-3L

Features
  • Low On-Resistance
  • Fast Switching Capability
  • 100% UIS and Rg tested
  • RoHS compliant, HALOGEN FREE
Applications
  • LED Lighting
  • Charger and Adapter
  • PC and Telecom Power
Mechanical Data
  • Green Molding Compound
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMJ60R065AFS TO220-3L 60R065AF Tube 50
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 600 V
Gate - Source Voltage VGS ±30 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 55 A
TA = 150°C: 24 A
Pulsed Drain Current (2) IDM 165 A
Single Pulse Avalanche Energy (3) EAS 1000 mJ
Single Pulse Avalanche Current (L = 10.5mH) IAS 6.0 A
Power Dissipation PD TA = 25°C: 500 W
MOSFET dv/dt Ruggedness, VDS = 0...400V — dv/dt 50
Reverse Diodes dv/dt, VDS = 0...400V, IDR < IS — dv/dt 50
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA — 62 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC — 0.25 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 600 — — V
Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V — — 10 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1.0mA 2.80 3.90 4.80 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 23.50A — 58 65 mΩ
Diodes Forward Voltage VSD IS = 23A, VGS = 0V — 0.90 — V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 100V, VGS = 0V, f = 250kHz — 2990 — pF
Output Capacitance Coss — 125 — pF
Reverse Transfer Capacitance Crss — 5.0 — pF
Effective Output Capacitance, Energy Related (8) Co(er) VDS = 0V... — 125 — pF
Effective Output Capacitance, Time Related (9) Co(tr) VDS = 0...400V — 637 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 3.5 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 400V — 88 — ns
Rise Time tr ID = 23A — 78 — ns
Turn-Off Delay Time td(off) RG = 5Ω — 139 — ns
Fall Time tf — 12 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge Qg VDS = 400V, ID = 25A — 73 — nC
Gate-Source Charge Qgs — 18 — nC
Gate-Drain Charge Qgd Qg = 0...10V — 23 — nC
Gate Plateau Voltage Vplateau — 4.50 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 23A, di/dt = 100A/µs, VR = 400V — 165 — ns
Body Diode Reverse Recovery Charge Qrr — 1.90 — µC
Body Diode Reverse Recovery Current IRRM — 22 — A
Diode Forward Current IS TA = 25°C — — 55 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. TJ=25°C, VDS=18V, VGS=10V, L=9.5A.
  4. Device without any heatsink.
  5. Thermal resistance from junction to soldering point (on the exposed drain pad).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
  8. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
  9. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
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