产品详情
SMJ60R130BFS
中晶新源 SineSemi核心代理商
高压 MOSFETTO220-3L
参数规格
- 车规 (Y/N)
- N
- 封装
- TO220-3L
- 结构
- N
- 结温 Tj
- 150 °C
- 漏源电压 VDS
- 600 V
- 漏极电流 ID
- 23 A
- 阈值电压 VGS(th) 典型
- 4 V
- 导通电阻 RDS(ON)@10V 典型
- 114 mΩ
- 导通电阻 RDS(ON)@10V 最大
- 137 mΩ
- 栅源电压 VGS 最大
- ±30 V
- 雪崩能量 EAS 最大
- 500 mJ
- 输入电容 Ciss 典型
- 1250 pF
- 输出电容 Coss 典型
- 52 pF
- 反向传输电容 Crss 典型
- 5.2 pF
- 总栅极电荷 Qg 典型
- 42 nC
封装与电路符号
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMJ60R130BFS
600V Super Junction N-Channel Power MOSFET
Product Summary
| V_DS |
R_DS(ON), max |
I_D, max |
| 600 V |
137 mΩ @ V_GS = 10V |
23 A |
TO220-3L
Features
- Low On-Resistance
- Fast Switching Capability
- 100% ∆V/DS & UIS & R_G Tested
- RoHS compliant, HALOGEN FREE
Applications
- LED Lighting
- Charger and Adapter
- PC and Telecom Power
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 3 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMJ60R130BFS |
TO220-3L |
60R130BF |
Tube |
50 |
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
V_DS |
600 |
V |
| Gate - Source Voltage |
V_GS |
±30 |
V |
| Continuous Drain Current (V_GS = 10V) ^(1) |
I_D |
T_C = 25°C: 23 |
A |
|
|
T_C = 100°C: 14.5 |
A |
| Pulsed Drain Current ^(2) |
I_DM |
92 |
A |
| Single Pulse Avalanche Energy ^(3) |
E_AS |
500 |
mJ |
| Single Pulse Avalanche Current (L = 10.0mH) |
I_AS |
6.5 |
A |
| Power Dissipation |
P_D |
T_C = 25°C: 169 |
W |
|
|
T_C = 100°C: 68 |
W |
| MOSFET dv/dt Ruggedness, V_DS = 0...400V |
dv/dt |
50 |
V/ns |
| Reverse Diodes dv/dt, V_DS = 0...400V, I_SD ≤ I_D |
dv/dt |
50 |
V/ns |
| Junction & Storage Temperature Range |
T_J, T_STG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient ^(4) |
R_θJA |
34 |
43 |
°C/W |
| Thermal Resistance, Junction-to-Case ^(5) |
R_θJC |
0.57 |
0.74 |
°C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = 250mA |
600 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
I_DSS |
V_DS = 480V, V_GS = 0V |
— |
— |
1.0 |
mA |
|
|
T_J = 125°C |
— |
— |
100 |
mA |
| Gate-Source Leakage Current |
I_GSS |
V_GS = ±30V, V_DS = 0V |
— |
— |
±100 |
nA |
On Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
V_GS(th) |
V_DS = V_GS, I_D = 250mA |
3.0 |
4.0 |
5.0 |
V |
| Static Drain-Source On-Resistance |
R_DS(on) |
V_GS = 10V, I_D = 10A |
— |
114 |
137 |
mΩ |
| Diodes Forward Voltage |
V_SD |
I_S = 10A, V_GS = 0V |
— |
1.0 |
1.2 |
V |
Dynamic Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
C_iss |
V_DS = 100V, V_GS = 0V, f = 1MHz |
— |
1250 |
— |
pF |
| Output Capacitance |
C_oss |
|
— |
52 |
— |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
5.2 |
— |
pF |
| Effective Output Capacitance, Energy Related ^(8) |
C_o(er) |
V_GS = 0V, V_DS = 0...480V, f = 1MHz |
— |
58 |
— |
pF |
| Effective Output Capacitance, Time Related ^(9) |
C_o(tr) |
|
— |
239 |
— |
pF |
| Gate Resistance |
R_g |
V_GS = 0V, V_DS = 0V, f = 1MHz |
— |
9.7 |
— |
Ω |
Switching Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
t_d(on) |
V_GS = 10V, V_DS = 400V |
— |
50 |
— |
ns |
| Rise Time |
t_r |
I_D = 10A, R_GEN = 25Ω |
— |
51 |
— |
ns |
| Turn-Off Delay Time |
t_d(off) |
|
— |
156 |
— |
ns |
| Fall Time |
t_f |
|
— |
22 |
— |
ns |
Gate Charge Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (V_GS = 10V) |
Q_g |
V_DS = 400V, I_D = 10A, V_GS = 10V |
— |
42 |
— |
nC |
| Total Gate Charge (V_GS = 8.0V) |
Q_g |
|
— |
35 |
— |
nC |
| Gate-Source Charge |
Q_gs |
|
— |
9.8 |
— |
nC |
| Gate-Drain Charge |
Q_gd |
|
— |
22 |
— |
nC |
| Gate Plateau Voltage |
V_plateau |
|
— |
7.1 |
— |
V |
Drain-Source Diode Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
t_rr |
I_S = 10A, di/dt = 100A/ms, T_J = 25°C |
— |
114 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Q_rr |
|
— |
0.50 |
— |
mC |
| Body Diode Reverse Recovery Current |
I_RRM |
|
— |
22 |
— |
A |
| Diode Forward Current |
I_S |
T_C = 25°C |
— |
— |
23 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Defined by design, not subject to production test. T_J=25°C, V_DD=400V, V_GS=10V, L=50mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
- C_o(er) is a fixed capacitance that gives the same stored energy as C_oss while V_DS is rising from 0 to 480V.
- C_o(tr) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 480V.
