产品详情
SMT6002ALPQ
中晶新源 SineSemi核心代理商
中低压 MOSFET车规PDFN5060-8L
参数规格
- 封装
- PDFN5060-8L
- 结构
- N
- 漏源电压 VDS
- 60 V
- 漏极电流 ID
- 175 A
- 导通电阻 RDS(ON)@10V 最大
- 2.1 mΩ
- 车规 (Y/N)
- Y
- 阈值电压 VGS(th) 典型
- 1.7 V
- 导通电阻 RDS(ON)@10V 典型
- 1.7 mΩ
- 导通电阻 RDS(ON)@4.5V 典型
- 2.5 mΩ
- 导通电阻 RDS(ON)@4.5V 最大
- 3.1 mΩ
- 栅源电压 VGS 最大
- ±20 V
- 结温 Tj
- 175 °C
- 雪崩能量 EAS 最大
- 436 mJ
- 输入电容 Ciss 典型
- 2816 pF
- 输出电容 Coss 典型
- 1326 pF
- 反向传输电容 Crss 典型
- 77 pF
- 总栅极电荷 Qg 典型
- 53 nC
不确定怎么选？阅读《中低压 MOSFET 选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT6002ALPQ
60V N-Channel Power MOSFET
Sinesemi Automotive MOSFET — AEC-Q101 Qualified, Logic Level, 175°C
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 60 V |
2.1 mΩ @ VGS = 10V |
175 A |
|
3.1 mΩ @ VGS = 4.5V |
|
PDFN5060-8L
Features
- N-Channel Enhancement Mode - Logic Level
- AEC-Q101 Qualified, PPAP Capable
- 175°C Operating Temperature
- 100% UIS and RG Tested
Application
- General Automotive Applications
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMT6002ALPQ |
PDFN5060-8L |
6002ALQ |
13" Tape&Reel |
5,000 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Units |
| Drain - Source Voltage |
VDS |
60 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID @ TA = 25°C |
175 |
A |
|
ID @ TC = 100°C |
123 |
A |
| Pulsed Drain Current (2) |
IDM |
698 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
436 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
IAS |
54 |
A |
| Power Dissipation |
PD @ TA = 25°C |
125 |
W |
|
PD @ TC = 100°C |
63 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
35 |
44 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
0.9 |
1.2 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
60 |
— |
— |
V |
|
|
VDS = 60V, VGS = 0V |
— |
— |
1.0 |
µA |
| Zero Gate Voltage Drain Current |
IDSS |
TJ = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 250µA |
1.2 |
1.7 |
2.5 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 20A |
— |
1.7 |
2.1 |
mΩ |
|
|
VGS = 4.5V, ID = 15A |
— |
2.5 |
3.1 |
mΩ |
| Forward Transconductance |
gfs |
VDS = 5.0V, ID = 20A |
— |
59 |
— |
S |
| Diodes Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
Ciss |
|
— |
2816 |
3660 |
pF |
| Output Capacitance |
Coss |
VDS = 30V, VGS = 0V, f = 1MHz |
— |
1326 |
1723 |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
77 |
154 |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
1.4 |
— |
Ω |
Switching Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Delay Time |
td(on) |
|
— |
5.0 |
— |
ns |
| Rise Time |
tr |
VDS = 10V, VGS = 30V |
— |
15 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
ID = 20A, RGEN = 3.0Ω |
— |
48 |
— |
ns |
| Fall Time |
tf |
|
— |
23 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge (VGS = 10V) |
Qg |
|
— |
53 |
79 |
nC |
| Total Gate Charge (VGS = 4.5V) |
Qg |
VDS = 30V, ID = 25A |
— |
27 |
42 |
nC |
| Gate-Source Charge |
Qgs |
VGS = N/V |
— |
7.8 |
13 |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
12 |
23 |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
2.9 |
— |
V |
Drain-Source Diode Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Reverse Recovery Time |
trr |
IS = 20A, di/dt = 100A/µs |
— |
47 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
42 |
— |
nC |
| Diode Forward Current |
IS |
TJ = 25°C |
— |
— |
156 |
A |
Notes:
- This current is chip limited, which is calculated based on Rθjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design; not subject to production test. EAS condition: TJ=25°C, VDD=30V, VGS=10V, L=1.0mH.
- Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
