SMT4007ALPD 产品图

产品详情

SMT4007ALPD

中晶新源 SineSemi核心代理商

中低压 MOSFETPDFN5060-8L-D
规格书下载

参数规格

封装
PDFN5060-8L-D
结构
N+N
漏源电压 VDS
40 V
漏极电流 ID
48 A
导通电阻 RDS(ON)@10V 最大
7.9 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
1.7 V
导通电阻 RDS(ON)@10V 典型
6.6 mΩ
导通电阻 RDS(ON)@4.5V 典型
9 mΩ
导通电阻 RDS(ON)@4.5V 最大
11.3 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
雪崩能量 EAS 最大
58 mJ
输入电容 Ciss 典型
611 pF
输出电容 Coss 典型
368 pF
反向传输电容 Crss 典型
19 pF
总栅极电荷 Qg 典型
9 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-通用开关
Y

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

封装与电路符号

SMT4007ALPD 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT4007ALPD

—V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
40 V 7.9 mΩ @ VGS = 10V 48 A
11.3 mΩ @ VGS = 4.5V

PDFN5060-8L

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT4007ALPD PDFN5060-8L-D 4007ALD 13" Tape&Reel 5,000
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 40 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TC = 25°C 48 A
ID @ TC = 100°C 30 A
Pulsed Drain Current (2) IDM 172 A
Single Pulse Avalanche Energy (3) EAS 58 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 19 A
Power Dissipation PD @ TC = 25°C 30 W
PD @ TC = 100°C 12 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 50 63 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 3.2 4.2 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 — — V
Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 1.2 1.7 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 6.6 7.9 mΩ
VGS = 4.5V, ID = 15A — 9.0 11.3 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 16 — S
Diode Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss — 611 — pF
Output Capacitance Coss VDS = 20V, VGS = 0V, f = 1MHz — 368 — pF
Reverse Transfer Capacitance Crss — 19 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 4.3 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) — 1.3 — ns
Rise Time tr VGS = 10V, VDS = 20V — 3.7 — ns
Turn-Off Delay Time td(off) ID = 20A, RGEN = 3.0Ω — 12 — ns
Fall Time tf — 5.4 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 20V, ID = 20A — 9.0 — nC
Total Gate Charge (VGS = 4.5V) Qg — 4.3 — nC
Gate-Source Charge Qgs VGS = 10V — 1.6 — nC
Gate-Drain Charge Qgd — 1.3 — nC
Gate Plateau Voltage Vplateau — 2.8 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IF = 20A, dI/dt = 100A/s — 20 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 6.4 — nC
Diode Forward Current IS TC = 25°C — — 36 A

Notes:

  1. This current is chip limited, which is calculated based on R_θJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design; not subject to production test.
  4. Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
SMT4007ALPDQ漏极电流 ID51 A导通电阻 RDS(ON)@10V 最大7.9 mΩSMT4010AHPD漏极电流 ID40 A导通电阻 RDS(ON)@10V 最大10.7 mΩSMT4005AHPD漏极电流 ID64 A导通电阻 RDS(ON)@10V 最大5.5 mΩSMT4005ALPD漏极电流 ID65 A导通电阻 RDS(ON)@10V 最大5.3 mΩSMT4005AHPDQ漏极电流 ID68 A导通电阻 RDS(ON)@10V 最大5.5 mΩSMT4005ALPDQ漏极电流 ID68 A导通电阻 RDS(ON)@10V 最大5.3 mΩ