SMT4007ALPD 产品图

产品详情

SMT4007ALPD

中晶新源 SineSemi核心代理商

中低压 MOSFETPDFN5060-8L-D
规格书下载

参数规格

封装
PDFN5060-8L-D
结构
N+N
漏源电压 VDS
40 V
漏极电流 ID
48 A
导通电阻 RDS(ON)@10V 最大
7.9 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
1.7 V
导通电阻 RDS(ON)@10V 典型
6.6 mΩ
导通电阻 RDS(ON)@4.5V 典型
9 mΩ
导通电阻 RDS(ON)@4.5V 最大
11.3 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
雪崩能量 EAS 最大
58 mJ
输入电容 Ciss 典型
611 pF
输出电容 Coss 典型
368 pF
反向传输电容 Crss 典型
19 pF
总栅极电荷 Qg 典型
9 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-通用开关
Y

封装与电路符号

SMT4007ALPD 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT4007ALPD

—V N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
40 V 7.9 mΩ @ V_GS = 10V 48 A
11.3 mΩ @ V_GS = 4.5V

PDFN5060-8L

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT4007ALPD PDFN5060-8L-D 4007ALD 13" Tape&Reel 5,000
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 40 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D @ T_C = 25°C 48 A
I_D @ T_C = 100°C 30 A
Pulsed Drain Current ^(2) I_DM 172 A
Single Pulse Avalanche Energy ^(3) E_AS 58 mJ
Single Pulse Avalanche Current (L = 0.1mH) I_AS 19 A
Power Dissipation P_D @ T_C = 25°C 30 W
P_D @ T_C = 100°C 12 W
Junction & Storage Temperature Range T_J, T_STG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 50 63 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 3.2 4.2 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 40 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 40V, V_GS = 0V — — 1.0 µA
T_J = 125°C — — 100 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_GS = V_DS, I_D = 250µA 1.2 1.7 2.5 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 20A — 6.6 7.9 mΩ
V_GS = 4.5V, I_D = 15A — 9.0 11.3 mΩ
Forward Transconductance g_fs V_DS = 5.0V, I_D = 20A — 16 — S
Diode Forward Voltage V_SD I_S = 2.0A, V_GS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss — 611 — pF
Output Capacitance C_oss V_DS = 20V, V_GS = 0V, f = 1MHz — 368 — pF
Reverse Transfer Capacitance C_rss — 19 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 4.3 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) — 1.3 — ns
Rise Time t_r V_GS = 10V, V_DS = 20V — 3.7 — ns
Turn-Off Delay Time t_d(off) I_D = 20A, R_GEN = 3.0Ω — 12 — ns
Fall Time t_f — 5.4 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = 10V) Q_g V_DS = 20V, I_D = 20A — 9.0 — nC
Total Gate Charge (V_GS = 4.5V) Q_g — 4.3 — nC
Gate-Source Charge Q_gs V_GS = 10V — 1.6 — nC
Gate-Drain Charge Q_gd — 1.3 — nC
Gate Plateau Voltage V_plateau — 2.8 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time t_rr I_F = 20A, dI/dt = 100A/s — 20 — ns
Body Diode Reverse Recovery Charge Q_rr T_J = 25°C — 6.4 — nC
Diode Forward Current I_S T_C = 25°C — — 36 A

Notes:

  1. This current is chip limited, which is calculated based on R_θJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design; not subject to production test.
  4. Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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