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SMT4001BHFP5Q

中晶新源 SineSemi核心代理商

中低压 MOSFET车规LFPAK5060
规格书下载

参数规格

封装
LFPAK5060
结构
N
漏源电压 VDS
40 V
漏极电流 ID
302 A
导通电阻 RDS(ON)@10V 最大
1 mΩ
车规 (Y/N)
Y
阈值电压 VGS(th) 典型
3 V
导通电阻 RDS(ON)@10V 典型
0.82 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
672 mJ
输入电容 Ciss 典型
4197 pF
输出电容 Coss 典型
2504 pF
反向传输电容 Crss 典型
76 pF
总栅极电荷 Qg 典型
59 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-通用开关
Y

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

封装与电路符号

SMT4001BHFP5Q 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT4001BHFP5Q

40V N-Channel Power MOSFET

Sinesemi Automotive MOSFET — AEC-Q101 Qualified, 175°C

Product Summary
VDS RDS(ON)_TYP I_D_MAX
40 V 0.82 mΩ @VGS = 10V 302 A

LFPAK5060

Features
  • N-Channel Enhancement Mode - Standard Level
  • AEC-Q101 Qualified, PPAP Capable
  • 175°C Operating Temperature
  • 100% ΔVDS & UIS & Rg Tested
Applications
  • General Automotive Applications
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT4001BHFP5Q LFPAK5060 4001BHQ 13" Tape&Reel 5,000
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 40 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TC = 25°C 302 A
ID @ TC = 100°C 214 A
Pulsed Drain Current (2) IDM 1209 A
Single Pulse Avalanche Energy (3) EAS 672 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 74 A
Power Dissipation PD @ TC = 25°C 158 W
PD @ TC = 100°C 79 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ. Max. Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 31 39 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.73 0.95 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 — — V
Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 20A — 0.82 1.0 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 53 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Input Capacitance Ciss — 4197 5456 pF
Output Capacitance Coss VDS = 20V, VGS = 0V, f = 1MHz — 2504 3255 pF
Reverse Transfer Capacitance Crss — 76 152 pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.2 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Turn-On Delay Time td(on) — 7.4 — ns
Rise Time tr VGS = 10V, VDS = 20V — 13 — ns
Turn-Off Delay Time td(off) ID = 20A, RGEN = 3.0Ω — 29 — ns
Fall Time tf — 14 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Total Gate Charge (VGS = 10V) Qg — 59 77 nC
Total Gate Charge (VGS = 7.0V) Qg VDS = 20V, ID = 20A — 42 55 nC
Gate-Source Charge Qgs VGS = 10V — 17.2 26 nC
Gate-Drain Charge Qgd — 11.8 17.7 nC
Gate Plateau Voltage Vplateau — 4.5 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Body Diode Reverse Recovery Time trr IF = 20A, dI/dt = 100A/µs, — 58 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 80 — nC
Diode Forward Current IS TC = 25°C — — 302 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10µs Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=20V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.

Typical Electrical and Thermal Characteristics

（曲线图略：Figure 1 Output Characteristics、Figure 3 On-Resistance vs. Gate-Source Voltage、Figure 4 On-Resistance vs. Drain Current and Gate Voltage ×2、Figure 5 On-Resistance vs. Junction Temperature、Figure 6 Source-Drain Diode Forward Voltage、Figure 7 Gate Threshold Variation vs. Junction Temperature、Figure 8 Gate Charge Characteristics、Figure 9 Capacitance Characteristics、Figure 10 Power Derating、Figure 11 Current Derating、Figure 12 Safe Operating Area、Figure 13 Normalized Maximum Transient Thermal Impedance）

Figure 13 说明：

  • δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
    1. Duty cycle δ = t1 / t2
    1. RJC(t) = r(t) × R_θJC

LFPAK5060 Package Outline

Package Outline Dimensions (MILLIMETERS)
DIM. MIN. NOM. MAX.
A 1.00 — 1.30
A1 0.00 — 0.15
A2 0.98 1.03 1.10
b 0.35 0.42 0.50
b1 4.02 4.23 4.41
c 0.19 0.22 0.25
c1 0.24 0.27 0.30
D 5.10 — 5.30
D1 4.95 5.13 5.30
D2 3.50 — 3.70
E 5.95 — 6.20
E1 4.45 4.58 4.70
E2 4.10 — 4.45
e 1.27 BSC.
L 0.40 0.65 0.85
L1 0.27 — 0.57
L2 0.80 — 1.30
θ 0° — 8°

Notes:

  1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,1994.
  2. ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
  3. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
Recommended Soldering Footprint (DIMENSIONS: MILLIMETERS)

（焊盘图略；关键尺寸：6.600 × 4.800，引脚区 4.784 宽，引脚间距 1.270，引脚宽 1.150，底部退距 0.520）

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