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SMT20T09AHY

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中低压 MOSFETTO247-3L

参数规格

封装
TO247-3L
结构
N
漏源电压 VDS
200 V
漏极电流 ID
114 A
导通电阻 RDS(ON)@10V 最大
9.6 mΩ
阈值电压 VGS(th) 典型
3.4 V
导通电阻 RDS(ON)@10V 典型
8 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
608 mJ
输入电容 Ciss 典型
6100 pF
输出电容 Coss 典型
436 pF
反向传输电容 Crss 典型
15 pF
总栅极电荷 Qg 典型
88 nC

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT20T09AHY

200V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
200 V 9.6 mΩ @ VGS = 10V 114 A

TO247-3L

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT20T09AHY TO247-3L 20T09AH Tube 30
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 200 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 114 A
TA = 100°C: 80 A
Pulsed Drain Current (2) IDM 454 A
Single Pulse Avalanche Energy (3) EAS 608 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 70 A
Power Dissipation (4) PD TA = 25°C: 349 W
TA = 100°C: 174 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 28 35 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.33 0.43 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
V(BR)DSS V(BR)DSS VGS = 0V, ID = 250µA 200 — — V
IDSS IDSS VDS = 200V — — 1.0 µA
IGSS IGSS VGS = ±20V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
VGS(th) VGS(th) ID = 250µA 2.5 3.4 4.5 V
RDS(on) RDS(on) VGS = 10V, ID = 20A — 8.0 9.6 mΩ
gfs gfs VDS = 5V, ID = 20A — 58 — S
VSD VSD IS = 2A — 0.7 1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Ciss Ciss VDS = 100V, f = 1MHz — 6100 — pF
Coss Coss — 436 — pF
Crss Crss — 15 — pF
Rg Rg f = 1MHz — 2.2 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
td(on) td(on) VDS = 100V — 18 — ns
tr tr ID = 20A, RGEN = 3Ω — 35 — ns
td(off) td(off) — 59 — ns
tf tf — 37 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Qg (10V) Qg VDS = 100V, ID = 20A — 88 — nC
Qg (6V) Qg — 58 — nC
Qgs Qgs VGS = 10V — 25 — nC
Qgd Qgd — 21 — nC
Vplateau Vplateau — 4.5 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
trr trr IS = 20A, di/dt = 100A/µs — 125 — ns
Qrr Qrr TJ = 25°C — 659 — nC
IS IS TA = 25°C — — 114 A

Notes:

1-7. Standard MOSFET notes apply. Device tested without external heat sink.

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