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SMT20T10BHS

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中低压 MOSFETTO220-3L

参数规格

封装
TO220-3L
结构
N
漏源电压 VDS
200 V
漏极电流 ID
110 A
导通电阻 RDS(ON)@10V 最大
10 mΩ
阈值电压 VGS(th) 典型
3.4 V
导通电阻 RDS(ON)@10V 典型
8.3 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
1440 mJ
输入电容 Ciss 典型
2996 pF
输出电容 Coss 典型
462 pF
反向传输电容 Crss 典型
13 pF
总栅极电荷 Qg 典型
45 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT20T10BHS(T)

200V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max Package
200 V 10.0 mΩ @ VGS = 10V 110 A TO263-3L
200 V 10.3 mΩ @ VGS = 10V TO220-3L

TO220-3L / TO263-3L

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT20T10BHS TO220-3L 20T10BH Tube 50
SMT20T10BHT TO263-3L 20T10BH 13" Tape&Reel 1,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 200 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 110 A
TA = 100°C: 78 A
Pulsed Drain Current (2) IDM 440 A
Single Pulse Avalanche Energy (3) EAS 1440 mJ
Single Pulse Avalanche Current (L = 0.3mH) IAS 86 A
Power Dissipation PD TA = 25°C: 333 W
TA = 100°C: 167 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 25 31 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.35 0.45 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 200 — — V
Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 3.4 4.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A (TO263-3L) — 8.3 10.0 mΩ
VGS = 10V, ID = 20A (TO220-3L) — 8.5 10.2 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 50 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 100V, VGS = 0V, f = 1MHz — 2996 — pF
Output Capacitance Coss — 462 — pF
Reverse Transfer Capacitance Crss — 13 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 3.0 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 100V — 13 — ns
Rise Time tr ID = 20A, RGEN = 3.0Ω — 29 — ns
Turn-Off Delay Time td(off) — 37 — ns
Fall Time tf — 31 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 100V, ID = 20A — 45 — nC
Total Gate Charge (VGS = 6.0V) Qg — 30 — nC
Gate-Source Charge Qgs VGS = 10V — 13 — nC
Gate-Drain Charge Qgd — 11 — nC
Gate Plateau Voltage Vplateau — 4.6 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100A/µs — 124 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 644 — nC
Diode Forward Current IS TA = 25°C — — 110 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. EAS condition, TJ=25°C, VDS=100V, VGS=10V, L=1.5mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to soldering point (on the exposed drain pad).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
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