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SMT15T04AHY

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中低压 MOSFETTO247-3L

参数规格

封装
TO247-3L
结构
N
漏源电压 VDS
150 V
漏极电流 ID
189 A
导通电阻 RDS(ON)@10V 最大
4.2 mΩ
阈值电压 VGS(th) 典型
3.4 V
导通电阻 RDS(ON)@10V 典型
3.5 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
1798 mJ
输入电容 Ciss 典型
6238 pF
输出电容 Coss 典型
783 pF
反向传输电容 Crss 典型
23 pF
总栅极电荷 Qg 典型
91 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT15T04AHY

150V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
150 V 4.2 mΩ @ VGS = 10V 189 A

TO247-3L

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% UIS and Rg tested
  • RoHS compliant, HALOGEN FREE
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT15T04AHY TO247-3L 15T04AH Tube 30
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 150 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 189 A
TA = 100°C: 133 A
Pulsed Drain Current (2) IDM 755 A
Single Pulse Avalanche Energy (3) EAS 1798 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 110 A
Power Dissipation (4) PD TA = 25°C: 349 W
TA = 100°C: 174 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 28 35 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.33 0.43 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 150 — — V
Zero Gate Voltage Drain Current IDSS VDS = 150V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 3.4 4.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 3.5 4.2 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 58 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 75V, VGS = 0V, f = 1MHz — 6238 — pF
Output Capacitance Coss — 783 — pF
Reverse Transfer Capacitance Crss — 23 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 2.2 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 75V — 20 — ns
Rise Time tr ID = 20A, RGEN = 3.0Ω — 41 — ns
Turn-Off Delay Time td(off) — 58 — ns
Fall Time tf — 44 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 75V, ID = 25A — 91 — nC
Total Gate Charge (VGS = 6.0V) Qg — 59 — nC
Gate-Source Charge Qgs VGS = 10V — 26 — nC
Gate-Drain Charge Qgd — 21 — nC
Gate Plateau Voltage Vplateau — 4.5 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100A/µs — 103 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 431 — nC
Diode Forward Current IS TA = 25°C — — 189 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. EAS condition, TJ=25°C, VDS=75V, VGS=10V, L=1.0mH.
  4. This device is tested without external heat sink.
  5. Thermal resistance from junction to soldering point (on the exposed drain pad).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
SMT15T04AHT7F封装TO263-7L导通电阻 RDS(ON)@10V 最大4.6 mΩSMT15T04AHS封装TO220-3L导通电阻 RDS(ON)@10V 最大4.8 mΩSMT15T04AHT封装TO263-3L导通电阻 RDS(ON)@10V 最大4.6 mΩSMT15T04AHTL封装TOLL导通电阻 RDS(ON)@10V 最大4.1 mΩSMT15T04AHTLF封装TOLL导通电阻 RDS(ON)@10V 最大4.3 mΩSMT15T04AHTLQ封装TOLL导通电阻 RDS(ON)@10V 最大4.1 mΩ