产品详情
SMT10T02AHPWQ
中晶新源 SineSemi核心代理商
参数规格
- 封装
- PDFN5060-8L-W
- 结构
- N
- 漏源电压 VDS
- 100 V
- 漏极电流 ID
- 184 A
- 导通电阻 RDS(ON)@10V 最大
- 2.4 mΩ
- 车规 (Y/N)
- Y
- 阈值电压 VGS(th) 典型
- 3 V
- 导通电阻 RDS(ON)@10V 典型
- 1.9 mΩ
- 栅源电压 VGS 最大
- ±20 V
- 结温 Tj
- 175 °C
- 雪崩能量 EAS 最大
- 1000 mJ
- 输入电容 Ciss 典型
- 4818 pF
- 输出电容 Coss 典型
- 2345 pF
- 反向传输电容 Crss 典型
- 50 pF
- 总栅极电荷 Qg 典型
- 70 nC
- ESD
- No
- 最小包装量
- 5000 pcs
- 最小订购量
- 50000 pcs
- 应用推荐-马达驱动
- Y
- 应用推荐-高频电源
- Y
- 应用推荐-通用开关
- Y
不确定怎么选？阅读《中低压 MOSFET 选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT10T02AHPWQ
100V N-Channel Power MOSFET
Sinesemi Automotive MOSFET — AEC-Q101 Qualified, 175°C, Wettable Flank
Product Summary
| VDS | RDS(ON), max | ID, max |
|---|---|---|
| 100 V | 2.4 mΩ @ VGS = 10V | 184 A |
PDFN5060-8L-W
Features
- N-Channel Enhancement Mode - Standard Level
- AEC-Q101 Qualified, PPAP Capable
- 175°C Operating Temperature
- 100% ΔVDS & UIS & Rg Tested
- Wettable Flank for Improved Optical Inspection
Applications
- General Automotive Applications
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number | Package Type | Device Marking | Form | Quantity (pcs) |
|---|---|---|---|---|
| SMT10T02AHPWQ | PDFN5060-8L-W | 10T02AHQ | 13" Tape&Reel | 5,000 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain - Source Voltage | VDS | 100 | V |
| Gate - Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (VGS = 10V) (1) | ID @ TC = 25°C | 184 | A |
| ID @ TC = 100°C | 130 | A | |
| Pulsed Drain Current (2) | IDM | 736 | A |
| Single Pulse Avalanche Energy (3) | EAS | 1000 | mJ |
| Single Pulse Avalanche Current (L = 0.1mH) | IAS | 74 | A |
| Power Dissipation | PD @ TC = 25°C | 172 | W |
| PD @ TC = 100°C | 86 | W | |
| Junction & Storage Temperature Range | TJ, TSTG | -55 ~ +175 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ | Max | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Ambient (4) | R_θJA | 29 | 37 | °C/W |
| Thermal Resistance, Junction-to-Case, Bottom (5) | R_θJC | 0.67 | 0.87 | °C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V | — | — | 1.0 | µA |
| TJ = 125°C | — | — | 100 | µA | ||
| Gate-Source Leakage Current | IGSS | VGS = ±20V, VDS = 0V | — | — | ±100 | nA |
On Characteristics (6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | — | 1.9 | 2.4 | mΩ |
| Forward Transconductance | gfs | VDS = 5.0V, ID = 20A | — | 67 | — | S |
| Diodes Forward Voltage | VSD | IS = 2.0A, VGS = 0V | — | 0.7 | 1.2 | V |
Dynamic Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input Capacitance | Ciss | — | 4818 | 6263 | pF | |
| Output Capacitance | Coss | VDS = 50V, VGS = 0V, f = 1MHz | — | 2345 | 3049 | pF |
| Reverse Transfer Capacitance | Crss | — | 50 | 100 | pF | |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | — | 2.3 | — | Ω |
Switching Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Turn-On Delay Time | td(on) | — | 11 | — | ns | |
| Rise Time | tr | VGS = 10V, VDS = 50V | — | 20 | — | ns |
| Turn-Off Delay Time | td(off) | ID = 20A, RGEN = 3.0Ω | — | 50 | — | ns |
| Fall Time | tf | — | 26 | — | ns |
Gate Charge Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Total Gate Charge (VGS = 10V) | Qg | — | 70 | 91 | nC | |
| Total Gate Charge (VGS = 6.0V) | Qg | VDS = 50V, ID = 20A | — | 45 | 59 | nC |
| Gate-Source Charge | Qgs | VGS = 10V | — | 21 | 32 | nC |
| Gate-Drain Charge | Qgd | — | 16.3 | 25 | nC | |
| Gate Plateau Voltage | Vplateau | — | 4.8 | — | V |
Drain-Source Diode Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Body Diode Reverse Recovery Time | trr | IF = 20A, dI/dt = 100A/µs, | — | 88 | — | ns |
| Body Diode Reverse Recovery Charge | Qrr | TJ = 25°C | — | 254 | — | nC |
| Diode Forward Current | IS | TC = 25°C | — | — | 184 | A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=50V, VGS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Typical Electrical and Thermal Characteristics
（曲线图略）
- Figure 1: Output Characteristics — ID vs. VDS; VGS = 4.5V, 5.0V, 5.5V, 6.0V, 7.0V, 10V
- Figure 2: Transfer Characteristics — ID vs. VGS; VDS = 3.0V; TJ = 25°C, 175°C
- Figure 3: On-Resistance vs. Gate-Source Voltage — RDS(on) vs. VGS; ID = 20A; TJ = 25°C, 175°C
- Figure 4: On-Resistance vs. Drain Current — RDS(on) vs. ID; VGS = 10V
- Figure 5: On-Resistance vs. Junction Temperature — Normalized RDS(on) vs. TJ; VGS = 10V, ID = 20A
- Figure 6: Source-Drain Diode Forward Voltage — IS vs. VSD; TJ = 25°C, 175°C; VGS = 10V
- Figure 7: Gate Threshold Variation vs. Junction Temperature — VGS(th) vs. TJ; ID = 250µA, 1.0mA
- Figure 8: Gate Charge Characteristics — VGS vs. Qg; ID = 20A
- Figure 9: Capacitance Characteristics — CT vs. VDS; Ciss, Coss, Crss
- Figure 10: Power Derating — PD vs. TC
- Figure 11: Current Derating — ID vs. TC
- Figure 12: Safe Operating Area — ID vs. VDS; TJ(Max) = 175°C, TC = 25°C; pulse widths 1.0µs, 10µs, 100µs, 1.0ms, 10ms, DC
- Figure 13: Normalized Maximum Transient Thermal Impedance — r(t) vs. Pulse Width (s); δ = 0.5, 0.2, 0.1, 0.05, 0.02, single pulse; Notes: 1. Duty cycle δ = t₁ / t₂ 2. R_θJC(t) = r(t) × R_θJC
PDFN5060-8L-W Package Outline
Package Dimensions (MILLIMETERS)
| DIM. | MIN. | NOM. | MAX. |
|---|---|---|---|
| A | 0.900 | 1.000 | 1.100 |
| b | 0.320 | 0.420 | 0.520 |
| c | 0.210 | 0.250 | 0.340 |
| D | 5.050 | 5.200 | 5.400 |
| D1 | 4.950 | 5.050 | 5.150 |
| D2 | 4.000 | 4.100 | 4.200 |
| E | 6.300 | 6.400 | 6.500 |
| E1 | 5.750 | 5.850 | 5.950 |
| E2 | 3.580 | 3.680 | 3.780 |
| e | 1.270 BSC | — | — |
| H | 0.600 | 0.700 | 0.800 |
| L | 0.650 | 0.750 | 0.850 |
| L1 | 0.160 | 0.260 | 0.360 |
| L2 | 0.200 | 0.275 | 0.350 |
| θ | 0° | — | 12° |
Notes:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
- ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
- DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
Recommended Soldering Footprint (DIMENSIONS: MILLIMETERS)
（封装焊盘图略）
尺寸标注值：1.270 / 0.520 / 1.000 / 1.260 / 4.200 / 3.775 / 7.100 / 0.355 / 1.175 / 1.150 / 1.270 / 0.520