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4007ALPX

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中低压 MOSFET工业PDFN5060-8L在售
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参数规格

封装
PDFN5060-8L
结构
N
漏源电压 VDS
40 V
漏极电流 ID
314 A
导通电阻 RDS(ON)@10V 最大
0.95 mΩ
阈值电压 VGS(th) 典型
1.7 V
阈值电压 Vth 最小
1.2 V
阈值电压 Vth 最大
2.5 V
导通电阻 RDS(ON)@10V 典型
0.73 mΩ
导通电阻 RDS(ON)@4.5V 典型
1.05 mΩ
导通电阻 RDS(ON)@4.5V 最大
1.4 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
-55~+150 °C
雪崩能量 EAS 最大
1210 mJ
输入电容 Ciss 典型
5508 pF
输出电容 Coss 典型
2277 pF
反向传输电容 Crss 典型
63 pF
总栅极电荷 Qg 典型
83 nC
最小包装量
5000 pcs

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在线规格书

以下为该型号规格书全文，如有更新以最新版本为准。

4007ALPX

40 V N-Channel Power MOSFET

DATASHEET

Features

  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% ΔVDS & UIS & Rg tested

Applications

  • Load switching
  • Motor drives
  • High frequency switching, synchronous rectification

Product Summary

VDS RDS(ON)_TYP ID_MAX
40 V 0.73 mΩ @ VGS = 10 V
1.05 mΩ @ VGS = 4.5 V		 314 A

Mechanical Data

Parameter Value
Molding Compound Green molding compound
Moisture Sensitivity Level 1 per J-STD-020
Flammability Classification Rating UL 94V-0

Pin Configuration

Pin # Function Symbol
1, 2, 3 Source S
4 Gate G
5, 6, 7, 8 Drain D

Package PDFN5060-8L. Pin assignment per top-view pin configuration: pins 1–3 = Source, pin 4 = Gate, pins 5–8 = Drain.

Ordering Information

Orderable Part Number Package Type Device Marking Form Quantity (pcs)
4007ALPX PDFN5060-8L 400SALX 13″ Tape & Reel 5,000

Absolute Maximum Ratings

（@ TC = 25 °C, unless otherwise specified.）

Parameter Symbol Value Units
Drain – Source Voltage VDS 40 V
Gate – Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10 V) (1), TC = 25 °C ID 314 A
Continuous Drain Current (VGS = 10 V) (1), TC = 100 °C ID 199 A
Pulsed Drain Current (2) IDM 1257 A
Single Pulse Avalanche Energy (3) EAS 1210 mJ
Single Pulse Avalanche Current (L = 0.1 mH) IAS 85 A
Power Dissipation, TC = 25 °C PD 171 W
Power Dissipation, TC = 100 °C PD 68 W
Junction and Storage Temperature Range TJ, TSTG −55 ~ +150 °C

Thermal Characteristics

Parameter Symbol Typ. Max. Units
Thermal Resistance, Junction-to-Ambient (4) RθJA 32 40 °C/W
Thermal Resistance, Junction-to-Case (5) RθJC 0.67 0.73 °C/W

Electrical Characteristics

（@ TJ = 25 °C, unless otherwise specified.）

Off Characteristics (6)
Parameter Symbol Test Conditions Min. Typ. Max. Units
Drain–Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 μA 40 — — V
Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V — — 1.0 μA
Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 125 °C — — 100 μA
Gate–Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Conditions Min. Typ. Max. Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250 μA 1.2 1.7 2.5 V
Static Drain–Source On-Resistance RDS(ON) VGS = 10 V, ID = 20 A — 0.73 0.95 mΩ
Static Drain–Source On-Resistance RDS(ON) VGS = 4.5 V, ID = 15 A — 1.05 1.4 mΩ
Forward Transconductance gfs VDS = 5.0 V, ID = 20 A — 78 — S
Diodes Forward Voltage VSD IS = 2.0 A, VGS = 0 V — 0.7 1.2 V

Dynamic Characteristics (7)

Parameter Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Ciss VDS = 20 V, VGS = 0 V, f = 1 MHz — 5508 — pF
Output Capacitance Coss VDS = 20 V, VGS = 0 V, f = 1 MHz — 2277 — pF
Reverse Transfer Capacitance Crss VDS = 20 V, VGS = 0 V, f = 1 MHz — 63 — pF
Gate Resistance Rg VGS = 0 V, VDS = 0 V, f = 1 MHz — 0.80 — Ω

Switching Characteristics (7)

（测试条件：VGS = 10 V, VDS = 20 V, ID = 20 A, RGEN = 3.0 Ω）

Parameter Symbol Min. Typ. Max. Units
Turn-On Delay Time td(on) — 6.6 — ns
Rise Time tr — 13 — ns
Turn-Off Delay Time td(off) — 55 — ns
Fall Time tf — 19 — ns

Gate Charge Characteristics (7)

（测试条件：VDS = 20 V, ID = 20 A, VGS = 10 V）

Parameter Symbol Min. Typ. Max. Units
Total Gate Charge (VGS = 10 V) Qg — 83 — nC
Total Gate Charge (VGS = 4.5 V) Qg — 40 — nC
Gate–Source Charge Qgs — 14.1 — nC
Gate–Drain Charge Qgd — 13.0 — nC
Gate Plateau Voltage Vplateau — 2.8 — V

Drain–Source Diode Characteristics (7)

Parameter Symbol Test Conditions Min. Typ. Max. Units
Body Diode Reverse Recovery Time trr IF = 20 A, dI/dt = 100 A/μs, TJ = 25 °C — 57 — ns
Body Diode Reverse Recovery Charge Qrr IF = 20 A, dI/dt = 100 A/μs, TJ = 25 °C — 84 — nC
Diode Forward Current IS TC = 25 °C — — 314 A

Package Dimensions

（PDFN5060-8L, dimensions in millimeters unless noted.）

Dimension Min. Nom. Max.
A 0.90 1.00 1.10
b 0.20 — 0.51
c 0.21 0.25 0.34
D 4.90 — 5.40
D1 4.80 — 5.15
D2 3.70 — 4.20
E 5.90 — 6.50
E1 5.65 5.80 5.95
E2 3.32 3.50 3.63
e 1.27 BSC
H 0.50 — 0.93
L 0.45 — 0.91
θ 0° — 12°

Dimensioning and tolerancing per ASME Y14.5M, 1994. All dimensions in millimeter (angle in degree). Dimensions D1 and E1 do not include mold flash protrusions or gate burrs.

Notes

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10 μs Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ = 25 °C, VDD = 20 V, VGS = 10 V, L = 1.0 mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.

Important Notice

Information in this document is provided solely for reference in connection with the product identified herein. No license, express or implied, to any intellectual property rights is granted by this document. Specifications are subject to change without notice. The product is not designed for use in life support systems.

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