产品详情
SRG006M065AU
中晶新源 SineSemi核心代理商
IGBT 单管消费TO252-3L
参数规格
- 封装
- TO252-3L
- 集射极电压 VCES
- 650 V
- 集电极电流 IC
- 13 A
- 饱和压降 VCE(sat) 最大
- 1.79 V
- 产品类型
- RC-IGBT
- 结温 Tj
- 175 °C
- 应用等级
- Consumer
- 集电极电流 IC@100°C 最大
- 6 A
- 开关频率
- 5 ~ 15 kHz
- 集电极峰值电流 ICP
- 18 A
- 开通损耗 Eon
- 0.22 mJ
- 关断损耗 Eoff
- 0.09 mJ
- 正向电流 IF@25°C 最大
- 12 A
- 反向恢复电荷 Qrr
- 0.22 mC
- 开通延时 td(on)
- 53 ns
- 上升时间 tr
- 52 ns
- 关断延时 td(off)
- 140 ns
- 下降时间 tf
- 85 ns
- 总栅极电荷 Qg
- 37 nC
- 正向脉冲电流 IF,pulse
- 18 A
- 正向压降 VF
- 1.61 V
- 反向恢复峰值电流 IRRM
- 3.6 A
不确定怎么选？阅读《IGBT 单管选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SRG006M065AU
650V / 6A IGBT
Features
- Low Saturation Voltage VCE(SAT)
- Low Switching Losses
Benefits
- Low Conduction for a High Efficiency
- Rugged Transient Reliability
- Low EMI
Applications
- Major Home Appliances
- Air Conditioning
- Refrigerators
- Drives
- GPD (General Purpose Drives)
Key Performance and Package Parameters
| Type |
VCE |
IC |
VCE(SAT) (Tvj = 25°C, IC = 6 A, VGE = 15 V) |
Tvjmax |
Package |
| IGBT |
650 V |
6A |
1.79 V |
175°C |
TO252-3L |
Absolute Maximum Ratings
| Parameter |
Symbol |
Conditions |
Value |
Unit |
| Collector emitter voltage |
VCE |
Tvj = 25 °C |
650 |
V |
| DC collector current |
IC |
TC = 25 °C |
13 |
A |
|
|
TC = 100 °C |
6 |
A |
| Pulsed collector current (tp limited by Tvjmax) |
ICpuls |
|
18 |
A |
| Maximum Diode forward current |
IF |
TC = 25 °C |
12 |
A |
|
|
TC = 100 °C |
6 |
A |
| Diode pulsed current (tp limited by Tvjmax) |
IFpuls |
|
18 |
A |
| Gate Source Voltage |
VGE |
Tvj = 25 °C |
±20 |
V |
| Power dissipation |
Ptot |
TC = 25 °C |
50 |
W |
|
|
TC = 100 °C |
25 |
W |
| Junction temperature |
Tvj |
|
-55 to +175 |
°C |
| Storage temperature |
Tstg |
|
-55 to +175 |
°C |
| Temperature under switching conditions |
Tvj OP |
|
-40 to +150 |
°C |
Thermal Resistance
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| IGBT Thermal resistance junction - case |
RthJC |
IGBT |
— |
— |
3.0 |
°C/W |
| Diode Thermal resistance junction - case |
RthJC |
Diode |
— |
— |
6.0 |
°C/W |
Static Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Collector emitter voltage |
V(BR)CES |
VGE = 0 V, IC = 3.0 mA, Tvj = 25 °C |
650 |
— |
— |
V |
| Collector emitter saturation voltage |
VCEsat |
VGE = 15 V, IC = 6 A, Tvj = 25 °C |
— |
1.79 |
2.2 |
V |
|
|
VGE = 15 V, IC = 6 A, Tvj = 175 °C |
— |
2.16 |
— |
V |
| Diode forward voltage |
VF |
VGE = 0 V, IC = 6 A, Tvj = 25 °C |
— |
1.61 |
2.0 |
V |
|
|
VGE = 0 V, IC = 6 A, Tvj = 175 °C |
— |
1.81 |
— |
V |
| Gate-emitter threshold voltage |
VGE(th) |
VCE = VGE, IC = 0.65 mA, Tvj = 25 °C |
5.0 |
5.6 |
6.2 |
V |
| Zero gate voltage collector current |
ICES |
VCE = 600 V, VGE = 0 V, Tvj = 25 °C |
— |
— |
100 |
µA |
| Gate-emitter leakage current |
IGES |
VGE = 20 V, VCE = 0 V |
— |
— |
100 |
nA |
|
IGES |
VGE = -20 V, VCE = 0 V |
-100 |
— |
— |
nA |
Dynamic Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Input capacitance |
Cies |
VGE = 0 V, VCE = 25 V, f = 1000 KHz |
— |
750 |
— |
pF |
| Output capacitance |
Coes |
|
— |
25 |
— |
pF |
| Reverse transfer capacitance |
Cres |
|
— |
15 |
— |
pF |
| Gate charge |
Qg |
VGE = 0 V to 15 V, IC = 20 A, VCE = 480 V |
— |
37 |
— |
nC |
Switching Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Turn-on delay time |
td(on) |
Tvj = 25 °C, VCE = 400 V, IC = 6 A, VGE = 0 / 15 V, RG(on) = 49 Ω, RG(off) = 49 Ω |
— |
53 |
— |
ns |
| Rise time |
tr |
|
— |
52 |
— |
ns |
| Turn-off delay time |
td(off) |
|
— |
140 |
— |
ns |
| Fall time |
tf |
|
— |
85 |
— |
ns |
| Turn-on energy |
Eon |
|
— |
0.22 |
— |
mJ |
| Turn-off energy |
Eoff |
|
— |
0.09 |
— |
mJ |
| Total switching energy |
Ets |
|
— |
0.31 |
— |
mJ |
| Turn-on delay time |
td(on) |
Tvj = 175 °C, VCE = 400 V, IC = 6 A, VGE = 0 / 15 V, RG(on) = 49 Ω, RG(off) = 49 Ω |
— |
41 |
— |
ns |
| Rise time |
tr |
|
— |
51 |
— |
ns |
| Turn-off delay time |
td(off) |
|
— |
153 |
— |
ns |
| Fall time |
tf |
|
— |
177 |
— |
ns |
| Turn-on energy |
Eon |
|
— |
0.34 |
— |
mJ |
| Turn-off energy |
Eoff |
|
— |
0.16 |
— |
mJ |
| Total switching energy |
Ets |
|
— |
0.50 |
— |
mJ |
Diode Recovery Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Reverse recovery time |
Trr |
Tvj = 25 °C, VCE = 400 V, IC = 6 A, VGE = 0 / 15 V, RG(on) = 49 Ω, RG(off) = 49 Ω |
— |
93 |
— |
ns |
| Reverse recovery charge |
Qrr |
|
— |
0.22 |
— |
µC |
| Peak reverse recovery current |
Irrm |
|
— |
3.6 |
— |
A |
| Reverse recovery energy |
Erec |
|
— |
0.04 |
— |
mJ |
| Reverse recovery time |
Trr |
Tvj = 175 °C, VCE = 400 V, IC = 6 A, VGE = 0 / 15 V, RG(on) = 49 Ω, RG(off) = 49 Ω |
— |
193 |
— |
ns |
| Reverse recovery charge |
Qrr |
|
— |
0.41 |
— |
µC |
| Peak reverse recovery current |
Irrm |
|
— |
3.85 |
— |
A |
| Reverse recovery energy |
Erec |
|
— |
0.08 |
— |
mJ |
Notes:
Confidential Shared Under NDA.
