SMJ65R190CFS 产品图

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SMJ65R190CFS

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高压 MOSFETTO220-3L

参数规格

车规 (Y/N)
N
封装
TO220-3L
结构
N
结温 Tj
150 °C
漏源电压 VDS
650 V
漏极电流 ID
19 A
阈值电压 VGS(th) 典型
3.8 V
导通电阻 RDS(ON)@10V 典型
152 mΩ
导通电阻 RDS(ON)@10V 最大
190 mΩ
栅源电压 VGS 最大
±30 V
雪崩能量 EAS 最大
210 mJ
输入电容 Ciss 典型
1110 pF
输出电容 Coss 典型
65 pF
反向传输电容 Crss 典型
0.8 pF
总栅极电荷 Qg 典型
36 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMJ65R190CFS

650V Super Junction N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
650 V 190 mΩ @ VGS = 10V 19 A

TO220-3L

Features
  • Low On-Resistance
  • Fast Switching Capability
  • 100% ∆V/DS & UIS & RG Tested
  • RoHS compliant, HALOGEN FREE
Applications
  • LED Lighting
  • Charger and Adapter
  • PC and Telecom Power
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMJ65R190CFS TO220-3L 65R190CF Tube 50
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 650 V
Gate - Source Voltage VGS ±30 V
Continuous Drain Current (VGS = 10V) (1) ID TC = 25°C: 19 A
TC = 100°C: 12 A
Pulsed Drain Current (2) IDM 78 A
Single Pulse Avalanche Energy (3) EAS 210 mJ
Single Pulse Avalanche Current (L = 10.0mH) IAS 7.7 A
Power Dissipation PD TC = 25°C: 169 W
TC = 100°C: 67.6 W
MOSFET dv/dt Ruggedness, VDS = 0...400V dv/dt 50 V/ns
Reverse Diodes dv/dt, VDS = 0...400V, ISD ≤ ID dv/dt 50 V/ns
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 52 65 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.53 0.74 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 — — V
Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V — — 5.0 µA
TJ = 125°C — 500 — µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.2 3.8 4.6 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 10A — 152 190 mΩ
Diodes Forward Voltage VSD IS = 10A, VGS = 0V — 0.90 1.1 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 400V, VGS = 0V, f = 1MHz — 1110 — pF
Output Capacitance Coss — 65 — pF
Reverse Transfer Capacitance Crss — 0.8 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 13.0 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 400V — 46 — ns
Rise Time tr ID = 17A, RGEN = 27Ω — 61 — ns
Turn-Off Delay Time td(off) — 120 — ns
Fall Time tf — 34 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 480V, ID = 10A, VGS = 10V — 36 — nC
Total Gate Charge (VGS = 8.0V) Qg — 32 — nC
Gate-Source Charge Qgs — 10 — nC
Gate-Drain Charge Qgd — 20 — nC
Gate Plateau Voltage Vplateau — 7.7 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 17A, di/dt = 100A/µs, TJ = 25°C — 95 — ns
Body Diode Reverse Recovery Charge Qrr — 0.3 — µC
Diode Forward Current IS TC = 25°C — — 19 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. TJ=25°C, VDD=400V, VGS=10V, L=50mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
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