SMJ60R165AFF 产品图

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SMJ60R165AFF

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高压 MOSFETTO220F-3L

参数规格

封装
TO220F-3L
结温 Tj
150 °C
漏源电压 VDS
600 V
漏极电流 ID
21 A
导通电阻 RDS(ON)@10V 典型
150 mΩ
导通电阻 RDS(ON)@10V 最大
165 mΩ
栅源电压 VGS 最大
±30 V
雪崩能量 EAS 最大
220 mJ
输入电容 Ciss 典型
1670 pF
输出电容 Coss 典型
68 pF
反向传输电容 Crss 典型
4.3 pF
总栅极电荷 Qg 典型
40 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMJ60R165AFF

650V Super Junction N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
600 V 165 mΩ @ VGS = 10V 21 A

TO220F-3L

Features
  • Ultra-fast body diode
  • Fast Switching Capability
  • Very high commutation ruggedness
  • RoHS compliant, HALOGEN FREE
Applications
  • AC/DC power supply
  • PC power
  • Solar invertor
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMJ60R165AFF TO220F-3L 60R165AF Tube 50
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 600 V
Gate - Source Voltage VGS ±30 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 21 A
TA = 150°C: 11 A
Pulsed Drain Current (2) IDM 60 A
Single Pulse Avalanche Energy (3) EAS 220 mJ
Single Pulse Avalanche Current (L = 10.0mH) IAS 3.6 A
Power Dissipation PD TA = 25°C: 34 W
MOSFET dv/dt Ruggedness, VDS = 0...520V — dv/dt 50
Reverse Diodes dv/dt, VDS = 0...400V, IDR < IS — dv/dt 50
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA — 62.5 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC — 3.67 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 600 — — V
Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V — — 10 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 — 5.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 7A — 150 165 mΩ
Diodes Forward Voltage VSD IS = 7A, VGS = 0V — 0.88 — V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 50V, VGS = 0V, f = 250µHz — 1670 — pF
Output Capacitance Coss — 68 — pF
Reverse Transfer Capacitance Crss — 4.3 — pF
Effective Output Capacitance, Energy Related (8) Co(er) VDS = 0V... — 53 — pF
Effective Output Capacitance, Time Related (9) Co(tr) VDS = 0...400V — 268 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 4 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 19V, VDS = 400V — 68 — ns
Rise Time tr ID = 7A — 13 — ns
Turn-Off Delay Time td(off) RG = 5Ω — 56 — ns
Fall Time tf — 5.0 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge Qg VDS = 400V, ID = 7A — 40 — nC
Gate-Source Charge Qgs — 9.0 — nC
Gate-Drain Charge Qgd Qg = 0...10V — 17.0 — nC
Gate Plateau Voltage Vplateau — 6.0 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 10A, di/dt = 100A/µs, VR = 400V, TJ = 25°C — 145 — ns
Body Diode Reverse Recovery Charge Qrr — 1.0 — µC
Body Diode Reverse Recovery Current IRRM — 10 — A
Diode Forward Current IS TA = 25°C — — 21 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. TJ=25°C, VDS=18V, ID=3.6A.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
  8. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
  9. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
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