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SMT6002AHT 中晶新源 SineSemi 核心代理商
中低压 MOSFET TO263-3L
参数规格
封装 TO263-3L
结构 N
漏源电压 VDS 60 V
漏极电流 ID 209 A
导通电阻 RDS(ON)@10V 最大 2.2 mΩ
车规 (Y/N) N
阈值电压 VGS(th) 典型 3 V
导通电阻 RDS(ON)@10V 典型 1.8 mΩ
栅源电压 VGS 最大 ±20 V
结温 Tj 175 °C
雪崩能量 EAS 最大 740 mJ
输入电容 Ciss 典型 5483 pF
输出电容 Coss 典型 2514 pF
反向传输电容 Crss 典型 98 pF
总栅极电荷 Qg 典型 94 nC
ESD No
最小包装量 1000 pcs
最小订购量 5000 pcs
应用推荐-马达驱动 Y
应用推荐-高频电源 Y
应用推荐-通用开关 Y 封装与电路符号 封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet） 在线规格书 以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT6002AHT
60V N-Channel Power MOSFET
Product Summary
V_DS
R_DS(ON), max
I_D, max
60 V
2.2 mΩ @ V_GS = 10V
209 A
TO263-3L
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
Parameter
Symbol
Value
Units
Drain - Source Voltage
V_DS
60
V
Gate - Source Voltage
V_GS
±20
V
Continuous Drain Current (V_GS = 10V) ^(1)
I_D @ T_C = 25°C
209
A
I_D @ T_C = 100°C
148
A
Pulsed Drain Current ^(2)
I_DM
836
A
Single Pulse Avalanche Energy ^(3)
E_AS
740
mJ
Single Pulse Avalanche Current (L = 0.1mH)
I_AS
70
A
Power Dissipation
P_D @ T_C = 25°C
185
W
P_D @ T_C = 100°C
93
W
Junction & Storage Temperature Range
T_J, T_STG
-55~+175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Unit
Thermal Resistance, Junction-to-Ambient ^(4)
R_θJA
36
45
°C/W
Thermal Resistance, Junction-to-Case ^(5)
R_θJC
0.62
0.81
°C/W
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V_(BR)DSS
V_GS = 0V, I_D = 250µA
60
—
—
V
V_DS = 60V, V_GS = 0V
—
—
1.0
µA
Zero Gate Voltage Drain Current
I_DSS
T_J = 125°C
—
—
100
µA
Gate-Source Leakage Current
I_GSS
V_GS = ±20V, V_DS = 0V
—
—
±100
nA
On Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Gate Threshold Voltage
V_GS(th)
V_GS = V_DS, I_D = 250µA
2.0
3.0
4.0
V
Static Drain-Source On-Resistance
R_DS(on)
V_GS = 10V, I_D = 20A
—
1.8
2.2
mΩ
Forward Transconductance
g_fs
V_DS = 5.0V, I_D = 20A
—
89
—
S
Diodes Forward Voltage
V_SD
I_S = 2.0A, V_GS = 0V
—
0.7
1.2
V
Dynamic Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Input Capacitance
C_iss
—
5483
—
pF
Output Capacitance
C_oss
V_DS = 30V, V_GS = 0V, f = 1MHz
—
2514
—
pF
Reverse Transfer Capacitance
C_rss
—
98
—
pF
Gate Resistance
R_g
V_GS = 0V, V_DS = 0V, f = 1MHz
—
2.1
—
Ω
Switching Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Turn-On Delay Time
t_d(on)
—
8.5
—
ns
Rise Time
t_r
V_DS = 30V, V_GS = 10V
—
18
—
ns
Turn-Off Delay Time
t_d(off)
I_D = 20A, R_GEN = 3.0Ω
—
65
—
ns
Fall Time
t_f
—
28
—
ns
Gate Charge Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Total Gate Charge (V_GS = 10V)
Q_g
—
94
—
nC
Gate-Source Charge
Q_gs
V_DS = 30V, I_D = 20A
—
25
—
nC
Gate-Drain Charge
Q_gd
—
23
—
nC
Gate Plateau Voltage
V_plateau
—
4.4
—
V
Drain-Source Diode Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Body Diode Reverse Recovery Time
t_rr
I_S = 20A, di/dt = 100A/µs
—
66
—
ns
Body Diode Reverse Recovery Charge
Q_rr
T_J = 25°C
—
131
—
nC
Diode Forward Current
I_S
T_J = 25°C
—
—
209
A
Notes:
This current is chip limited, which is calculated based on Rthjc. 2. This current is calculated on single pulse with 10μs Single Pulse. 3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=30V, VGS=10V, L=1.0mH. 4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area. 5. Thermal resistance from junction to the exposed drain pad. 6. Short duration pulse test used to minimize self-heating effect. 7. Defined by design, not subject to production.
