SMT4005AHUQ 产品图

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SMT4005AHUQ

中晶新源 SineSemi核心代理商

中低压 MOSFET车规

参数规格

结构
N
漏源电压 VDS
40 V
漏极电流 ID
74 A
导通电阻 RDS(ON)@10V 最大
5.5 mΩ
车规 (Y/N)
Y
导通电阻 RDS(ON)@10V 典型
4.6 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
118 mJ
输入电容 Ciss 典型
962 pF
输出电容 Coss 典型
550 pF
反向传输电容 Crss 典型
25 pF
总栅极电荷 Qg 典型
14 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT4005AHUQ

40V N-Channel Power MOSFET

Sinesemi Automotive MOSFET — AEC-Q101 Qualified, 175°C

Product Summary
VDS RDS(ON), max ID, max
40 V 5.5 mΩ @ VGS = 10V 74 A

TO252-3L

Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Units
Drain - Source Voltage VDS 40 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TA = 25°C 74 A
ID @ TC = 100°C 52 A
Pulsed Drain Current (2) IDM 294 A
Single Pulse Avalanche Energy (3) EAS 118 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 28 A
Power Dissipation PD @ TA = 25°C 54 W
PD @ TC = 100°C 27 W
Junction & Storage Temperature Range TJ, TSTG -55~+175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 45 57 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 2.1 2.8 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 — — V
VDS = 40V, VGS = 0V — — 1.0 µA
Zero Gate Voltage Drain Current IDSS TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 — 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 4.6 5.5 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 15 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss — 962 1277 pF
Output Capacitance Coss VDS = 20V, VGS = 0V, f = 1MHz — 550 771 pF
Reverse Transfer Capacitance Crss — 25 50 pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 4.2 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Delay Time td(on) — 4.5 — ns
Rise Time tr VDS = 20V, VGS = 20V — 18 — ns
Turn-Off Delay Time td(off) ID = 20A, RGEN = 3.0Ω — 14 — ns
Fall Time tf — 7.4 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge (VGS = 10V) Qg — 14 18.2 nC
Gate-Source Charge Qgs VDS = 20V, ID = 20A — 4.6 6.9 nC
Gate-Drain Charge Qgd — 2.9 4.4 nC
Gate Plateau Voltage Vplateau — 5.2 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100A/µs — 30 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 13 — nC
Diode Forward Current IS TJ = 25°C — — 62 A

Notes:

  1. This current is chip limited, which is calculated based on Rθjc.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design; not subject to production test.
  4. Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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