SMT10T10BLP 产品图

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SMT10T10BLP

中晶新源 SineSemi核心代理商

中低压 MOSFETPDFN5060-8L
规格书下载

参数规格

封装
PDFN5060-8L
结构
N
漏源电压 VDS
100 V
漏极电流 ID
59 A
导通电阻 RDS(ON)@10V 最大
10.8 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
1.7 V
导通电阻 RDS(ON)@10V 典型
9.2 mΩ
导通电阻 RDS(ON)@4.5V 典型
11.8 mΩ
导通电阻 RDS(ON)@4.5V 最大
14.5 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
雪崩能量 EAS 最大
130 mJ
输入电容 Ciss 典型
1007 pF
输出电容 Coss 典型
439 pF
反向传输电容 Crss 典型
10 pF
总栅极电荷 Qg 典型
17.8 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-高频电源
Y
应用推荐-锂电池保护
Y
应用推荐-通用开关
Y

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

封装与电路符号

SMT10T10BLP 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT10T10BLP

100V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
100 V 10.8 mΩ @ VGS = 10V 59 A
14.5 mΩ @ VGS = 4.5V

PDFN5060-8L

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 100 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TC = 25°C: 59 A
TC = 100°C: 37 A
Pulsed Drain Current (2) IDM 200 A
Single Pulse Avalanche Energy (3) EAS 130 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 24 A
Power Dissipation PD TC = 25°C: 69 W
TC = 100°C: 28 W
Junction & Storage Temperature Range TJ, TSTG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 38 48 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 1.4 1.8 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 — — V
Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 1.2 1.7 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 9.2 10.8 mΩ
VGS = 4.5V, ID = 15A — 11.8 14.5 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 29 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 50V, VGS = 0V, f = 1MHz — 1007 — pF
Output Capacitance Coss — 439 — pF
Reverse Transfer Capacitance Crss — 10 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.1 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V — 3.5 — ns
Rise Time tr ID = 20A, RGEN = 3.0Ω — 3.2 — ns
Turn-Off Delay Time td(off) — 15 — ns
Fall Time tf — 7.1 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 50V, ID = 20A — 17.8 — nC
Total Gate Charge (VGS = 4.5V) Qg — 9.2 — nC
Gate-Source Charge Qgs — 3.0 — nC
Gate-Drain Charge Qgd — 3.9 — nC
Gate Plateau Voltage Vplateau — 3.0 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100 A/µs — 39 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 39 — nC
Diode Forward Current IS TC = 25°C — — 59 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10us Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=50V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
SMT10T10ALP漏极电流 ID61 A导通电阻 RDS(ON)@10V 最大10.6 mΩSMT10T09ALPX漏极电流 ID67 A导通电阻 RDS(ON)@10V 最大9.2 mΩSMT10T08AHP漏极电流 ID71 A导通电阻 RDS(ON)@10V 最大8.8 mΩSMT10T08AHPB漏极电流 ID71 A导通电阻 RDS(ON)@10V 最大8.6 mΩSMT10T08ALPX漏极电流 ID73 A导通电阻 RDS(ON)@10V 最大8.2 mΩSMT10T08AHPQ漏极电流 ID74 A导通电阻 RDS(ON)@10V 最大8.8 mΩ