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SMT10T01KHTL

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中低压 MOSFETTOLL

参数规格

封装
TOLL
结构
N
漏源电压 VDS
100 V
漏极电流 ID
435 A
导通电阻 RDS(ON)@10V 最大
1.15 mΩ
阈值电压 VGS(th) 典型
3 V
导通电阻 RDS(ON)@10V 典型
0.95 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
2016 mJ
输入电容 Ciss 典型
12612 pF
输出电容 Coss 典型
4429 pF
反向传输电容 Crss 典型
2192 pF
总栅极电荷 Qg 典型
347 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT10T01KHTL

100V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
100 V 1.15 mΩ @ VGS = 10V 435 A

TOLL

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% ∆VDS & UIS & Rg Tested
  • RoHS compliant, HALOGEN FREE
Applications
  • DC/DC in Telecoms and Industrial
  • Synchronous Rectification in SMPS
  • Low Speed Circuit, Like BMS
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT10T01KHTL TOLL 10T01KH 13" Tape&Reel 2,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 100 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 435 A
TA = 100°C: 307 A
Pulsed Drain Current (2) IDM 1738 A
Single Pulse Avalanche Energy (3) EAS 2016 mJ
Single Pulse Avalanche Current (L = 0.3mH) IAS 80 A
Power Dissipation PD TA = 25°C: 429 W
TA = 100°C: 214 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 23 29 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.26 0.35 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 — — V
Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 80A — 0.95 1.15 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 75 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 50V, VGS = 0V, f = 1MHz — 12612 — pF
Output Capacitance Coss — 4429 — pF
Reverse Transfer Capacitance Crss — 2192 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.7 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V — 29 — ns
Rise Time tr ID = 80A, RGEN = 3.0Ω — 139 — ns
Turn-Off Delay Time td(off) — 129 — ns
Fall Time tf — 208 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 50V, ID = 80A — 347 — nC
Total Gate Charge (VGS = 6.0V) Qg — 280 — nC
Gate-Source Charge Qgs VGS = 10V — 44 — nC
Gate-Drain Charge Qgd — 206 — nC
Gate Plateau Voltage Vplateau — 4.2 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 80A, di/dt = 100A/µs — 110 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 279 — nC
Diode Forward Current IS TA = 25°C — — 435 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. EAS condition, TJ=25°C, VDS=50V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
SMT10T01AHTLBQ漏极电流 ID443 A导通电阻 RDS(ON)@10V 最大1.35 mΩSMT10T01FHTL2漏极电流 ID420 A导通电阻 RDS(ON)@10V 最大1.25 mΩSMT10T01BHTL2漏极电流 ID412 A导通电阻 RDS(ON)@10V 最大1.2 mΩSMT10T01FHTL漏极电流 ID401 A导通电阻 RDS(ON)@10V 最大1.4 mΩSMT10T0SAHTL2漏极电流 ID473 A导通电阻 RDS(ON)@10V 最大1.05 mΩSMT10T01EHTL漏极电流 ID399 A导通电阻 RDS(ON)@10V 最大1.5 mΩ