产品详情
SMT10T01AHTLF
中晶新源 SineSemi核心代理商
中低压 MOSFETTOLL
参数规格
- 封装
- TOLL
- 结构
- N
- 漏源电压 VDS
- 100 V
- 漏极电流 ID
- 390 A
- 导通电阻 RDS(ON)@10V 最大
- 1.4 mΩ
- 阈值电压 VGS(th) 典型
- 3 V
- 导通电阻 RDS(ON)@10V 典型
- 1.2 mΩ
- 栅源电压 VGS 最大
- ±20 V
- 结温 Tj
- 175 °C
- 雪崩能量 EAS 最大
- 2486 mJ
- 输入电容 Ciss 典型
- 10213 pF
- 输出电容 Coss 典型
- 3637 pF
- 反向传输电容 Crss 典型
- 54 pF
- 总栅极电荷 Qg 典型
- 143 nC
不确定怎么选？阅读《中低压 MOSFET 选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT10T01AHTLF
100V N-Channel Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 100 V |
1.4 mΩ @ VGS = 10V |
390 A |
TOLL
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% ∆VDS & UIS & Rg Tested
- Very Low Reverse Recovery Charge (Qrr)
Applications
- DC/DC in Telecoms and Industrial
- Synchronous Rectification in SMPS
- Hard Switching and High Speed Circuit
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMT10T01AHTLF |
TOLL |
10T01AHF |
13" Tape&Reel |
2,000 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
100 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID |
TA = 25°C: 390 |
A |
|
|
TA = 100°C: 276 |
A |
| Pulsed Drain Current (2) |
IDM |
1325 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
2486 |
mJ |
| Single Pulse Avalanche Current (L = 0.3mH) |
IAS |
84 |
A |
| Power Dissipation |
PD |
TA = 25°C: 429 |
W |
|
|
TA = 100°C: 214 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
23 |
29 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
0.26 |
0.35 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
100 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 100V, VGS = 0V |
— |
— |
1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
2.0 |
3.0 |
4.0 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 80A |
— |
1.2 |
1.4 |
mΩ |
| Forward Transconductance |
gfs |
VDS = 5.0V, ID = 20A |
— |
81 |
— |
S |
| Diodes Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 50V, VGS = 0V, f = 1MHz |
— |
10213 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
3637 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
54 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
2.2 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 50V |
— |
26 |
— |
ns |
| Rise Time |
tr |
ID = 80A, RGEN = 3.0Ω |
— |
33 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
80 |
— |
ns |
| Fall Time |
tf |
|
— |
42 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 50V, ID = 80A |
— |
143 |
— |
nC |
| Total Gate Charge (VGS = 7.0V) |
Qg |
|
— |
104 |
— |
nC |
| Gate-Source Charge |
Qgs |
VGS = 10V |
— |
45 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
30 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
4.8 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = 80A, di/dt = 100A/µs |
— |
56 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
67 |
— |
nC |
| Body Diode Reverse Recovery Time |
trr |
IS = 80A, di/dt = 1000A/µs |
— |
47 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
434 |
— |
nC |
| Diode Forward Current |
IS |
TA = 25°C |
— |
— |
390 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test. EAS condition, TJ=25°C, VDS=50V, VGS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
