SMN6030ALAE product image

Product Detail

SMN6030ALAE

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
Trench
Configuration
N
VDS_Max
60 V
RDS(ON)_Max @VGS=10V
30 mΩ
RDS(ON)_Typ @VGS=10V
23 mΩ
VGS(th)_Typ
1.3 V
With ESD
No
Die Size (mm²)
1450*1080
Gross Die (8" wafer)
18500
Wafer Thickness (mm)
150±15
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
26 mΩ
RDS(ON)_Max @VGS=4.5V
40 mΩ
Ciss_Typ
1038 pF
Coss_Typ
68 pF
Crss_Typ
57 pF
Qg_Typ
22 nC
Qgs_Typ
2.1 nC
Qgd_Typ
3.5 nC