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SMT10T09ALAE

中晶新源 SineSemi核心代理商

晶圆/裸片Wafer

参数规格

工艺
SGT
结构
N
漏源电压 VDS
100 V
导通电阻 RDS(ON)@10V 最大
9.8 mΩ
导通电阻 RDS(ON)@10V 典型
8.1 mΩ
阈值电压 VGS(th) 典型
1.7 V
With ESD
No
Die Size (μm×μm)
2430*1550
Gross Die (8" wafer)
7499
Wafer Thickness (μm)
150±15
栅源电压 VGS 最大
±20 V
导通电阻 RDS(ON)@4.5V 典型
10.5 mΩ
导通电阻 RDS(ON)@4.5V 最大
13.2 mΩ
输入电容 Ciss 典型
1049 pF
输出电容 Coss 典型
555 pF
反向传输电容 Crss 典型
12 pF
总栅极电荷 Qg 典型
18.9 nC
Qgs_Typ
2.8 nC
Qgd_Typ
4.5 nC
结温 Tj
150 °C
原厂备注
SGT N

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT10T09ALAE

100V N-Channel Power MOSFET (Wafer Datasheet)

Product Summary
  • VDS = 100V
  • RDS(ON), max = 8.1mΩ (VGS = 10V)
  • RDS(ON), max = 10.5mΩ (VGS = 4.5V)
Chip Information
Parameter Value
Die Size (with scribe line) 2430µm × 1550µm
Gate Pad Size 155µm × 155µm
Source Pad Size Full Metalized Source
Scribe Line Width 80µm
Wafer Thickness 150µm ± 15µm
Wafer Diameter 8 inch
Passivation Yes
Front Metal Composition & Thickness AlCu 4µm
Back Metal Composition & Thickness Ti/Ni/Ag, 1.3µm
Gross Die (approximately) 7,496
Recommended Package PDFN5060-8L
Ordering Information
Orderable Part Number Wafer Description
SMT10T09ALAE Sampling Tested Wafer
SMT10T09ALAE-C Full CP Tested Wafer
Maximum Ratings (@ TJ = 25°C, unless otherwise specified.)
Parameter Symbol Value Units
Drain - Source Voltage VDS 100 V
Gate - Source Voltage VGS ±20 V
Junction Temperature Range TJ -55 ~ +175 °C
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Parameter Symbol Test Conditions Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 — — V
Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V — — 1.0 µA
Gate-Body Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.2 1.7 2.5 V
Static Drain-Source On-Resistance (1) RDS(ON) VGS = 10V, ID = 20A — 8.1 9.8 mΩ
VGS = 4.5V, ID = 15A — 10.5 13.2 mΩ
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss VDS = 50V, VGS = 0V, f = 1MHz — 1046 — pF
Output Capacitance Coss — 556 — pF
Reverse Transfer Capacitance Crss — 12 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.2 — Ω
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge Qg VDS = 50V, ID = 20A — 18.8 — nC
Gate-Source Charge Qgs VGS = 10V — 2.8 — nC
Gate-Drain Charge Qgd — 4.5 — nC
Gate Plateau Voltage Vplateau — 3.0 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100A/µs — 40 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 41 — nC

Notes:

  1. RDS(ON) value is referred by the device assembled in PDFN5060-8L.
SMT10T09ALAGX导通电阻 RDS(ON)@10V 最大9.2 mΩ输入电容 Ciss 典型1604 pFSMT10T10ALAE导通电阻 RDS(ON)@10V 最大10.6 mΩ输入电容 Ciss 典型1049 pFSMT10T08AHAE导通电阻 RDS(ON)@10V 最大8.9 mΩ输入电容 Ciss 典型1345 pFSMT10T08ALAGX导通电阻 RDS(ON)@10V 最大8.2 mΩ输入电容 Ciss 典型1861 pFSMT10T08ALAE导通电阻 RDS(ON)@10V 最大8 mΩ输入电容 Ciss 典型1295 pFSMT10T07AHAE导通电阻 RDS(ON)@10V 最大7.5 mΩ输入电容 Ciss 典型1568 pF