SMT6005ALP 产品图

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SMT6005ALP

中晶新源 SineSemi核心代理商

中低压 MOSFETPDFN5060-8L
规格书下载

参数规格

封装
PDFN5060-8L
结构
N
漏源电压 VDS
60 V
漏极电流 ID
104 A
导通电阻 RDS(ON)@10V 最大
4.1 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
1.7 V
导通电阻 RDS(ON)@10V 典型
3.4 mΩ
导通电阻 RDS(ON)@4.5V 典型
4.5 mΩ
导通电阻 RDS(ON)@4.5V 最大
5.7 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
雪崩能量 EAS 最大
212 mJ
输入电容 Ciss 典型
1792 pF
输出电容 Coss 典型
901 pF
反向传输电容 Crss 典型
32 pF
总栅极电荷 Qg 典型
33 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-高频电源
Y
应用推荐-锂电池保护
Y
应用推荐-通用开关
Y

封装与电路符号

SMT6005ALP 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT6005ALP

60V N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
— V 4.1 mΩ @ V_GS = 10V 104 A

PDFN5060-8L

Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
Parameter Symbol Value Units
Drain - Source Voltage V_DS 60 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D @ T_C = 25°C 104 A
I_D @ T_C = 100°C 66 A
Pulsed Drain Current ^(2) I_DM 391 A
Single Pulse Avalanche Energy ^(3) E_AS 212 mJ
Single Pulse Avalanche Current (L = 0.1mH) I_AS 37 A
Power Dissipation P_D @ T_C = 25°C 78 W
P_D @ T_C = 100°C 31 W
Junction & Storage Temperature Range T_J, T_STG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 37 46 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 1.2 1.6 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 60 — — V
V_DS = 60V, V_GS = 0V — — 1.0 µA
Zero Gate Voltage Drain Current I_DSS T_J = 125°C — — 100 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage V_GS(th) V_GS = V_DS, I_D = 250µA 1.2 1.7 2.5 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 4.5V, I_D = 15A — 4.5 5.7 mΩ
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 20A — 3.4 4.1 mΩ
Forward Transconductance g_fs V_DS = 5.0V, I_D = 20A — 30 — S
Diodes Forward Voltage V_SD I_S = 2.0A, V_GS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance C_iss — 1792 — pF
Output Capacitance C_oss V_DS = 30V, V_GS = 0V, f = 1MHz — 901 — pF
Reverse Transfer Capacitance C_rss — 32 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 1.5 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Delay Time t_d(on) — 5.4 — ns
Rise Time t_r V_DS = 30V, V_GS = 10V — 9.5 — ns
Turn-Off Delay Time t_d(off) I_D = 20A, R_GEN = 3.0Ω — 26 — ns
Fall Time t_f — 16 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge (V_GS = 10V) Q_g — 33 — nC
Total Gate Charge (V_GS = 4.5V) Q_g — 16.8 — nC
Gate-Source Charge Q_gs V_DS = 30V, I_D = 20A — 5.6 — nC
Gate-Drain Charge Q_gd — 7.3 — nC
Gate Plateau Voltage V_plateau — 3.2 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Body Diode Reverse Recovery Time t_rr I_S = 20A, di/dt = 100A/µs — 40 — ns
Body Diode Reverse Recovery Charge Q_rr T_J = 25°C — 48 — nC
Diode Forward Current I_S T_J = 25°C — — 93 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10μs Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=30V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed drain pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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