SMT6003DHU 产品图

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SMT6003DHU

中晶新源 SineSemi核心代理商

中低压 MOSFETTO252-3L
规格书下载

参数规格

封装
TO252-3L
结构
N
漏源电压 VDS
60 V
漏极电流 ID
107 A
导通电阻 RDS(ON)@10V 最大
3.9 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
3 V
导通电阻 RDS(ON)@10V 典型
3.3 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
雪崩能量 EAS 最大
292 mJ
输入电容 Ciss 典型
2717 pF
输出电容 Coss 典型
1089 pF
反向传输电容 Crss 典型
48 pF
总栅极电荷 Qg 典型
46 nC
ESD
No
最小包装量
2500 pcs
最小订购量
25000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-锂电池保护
Y
应用推荐-通用开关
Y

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

封装与电路符号

SMT6003DHU 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT6003DHU

60V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
60 V 3.9 mΩ @ VGS = 10V 107 A

TO252-3L

Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Units
Drain - Source Voltage VDS 60 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TC = 25°C 107 A
ID @ TC = 100°C 67 A
Pulsed Drain Current (2) IDM 402 A
Single Pulse Avalanche Energy (3) EAS 292 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 42 A
Power Dissipation PD @ TC = 25°C 76 W
PD @ TC = 100°C 30 W
Junction & Storage Temperature Range TJ, TSTG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 30 38 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 1.3 1.7 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 — — V
VDS = 60V, VGS = 0V — — 1.0 µA
Zero Gate Voltage Drain Current IDSS TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 3.3 3.9 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 33 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss — 2717 — pF
Output Capacitance Coss VDS = 30V, VGS = 0V, f = 1MHz — 1089 — pF
Reverse Transfer Capacitance Crss — 48 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.2 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Delay Time td(on) — 7.7 — ns
Rise Time tr VDS = 30V, VGS = 10V — 17 — ns
Turn-Off Delay Time td(off) ID = 20A, RGEN = 3.0Ω — 26 — ns
Fall Time tf — 14 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge (VGS = 10V) Qg — 46 — nC
Gate-Source Charge Qgs VDS = 30V, ID = 20A — 10.7 — nC
Gate-Drain Charge Qgd — 11.7 — nC
Gate Plateau Voltage Vplateau — 4.4 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100A/µs — 45 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 64 — nC
Diode Forward Current IS TJ = 25°C — — 89 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10μs Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=30V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed drain pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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