SMT12T01AHTL2 产品图

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SMT12T01AHTL2

中晶新源 SineSemi核心代理商

中低压 MOSFETTOLL
规格书下载

参数规格

封装
TOLL
结构
N
漏源电压 VDS
120 V
漏极电流 ID
374 A
导通电阻 RDS(ON)@10V 最大
1.7 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
3 V
导通电阻 RDS(ON)@10V 典型
1.4 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
雪崩能量 EAS 最大
2132 mJ
输入电容 Ciss 典型
12205 pF
输出电容 Coss 典型
2542 pF
反向传输电容 Crss 典型
69 pF
总栅极电荷 Qg 典型
156 nC
ESD
No
最小包装量
2000 pcs
最小订购量
20000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-通用开关
Y

封装与电路符号

SMT12T01AHTL2 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT12T01AHTL2

120V N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
120 V 1.7 mΩ @ V_GS = 10V 374 A

TOLL

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 120 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D T_C = 25°C: 374 A
T_C = 100°C: 237 A
Pulsed Drain Current ^(2) I_DM 1421 A
Single Pulse Avalanche Energy ^(3) E_AS 2132 mJ
Single Pulse Avalanche Current (L = 0.1mH) I_AS 78 A
Power Dissipation P_D T_C = 25°C: 417 W
T_C = 100°C: 167 W
Junction & Storage Temperature Range T_J, T_STG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 20 25 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 0.23 0.30 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 120 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 120V, V_GS = 0V — — 1.0 µA
T_J = 125°C — — 100 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_GS = V_DS, I_D = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 80A — 1.4 1.7 mΩ
Forward Transconductance g_fs V_DS = 5.0V, I_D = 20A — 79 — S
Diodes Forward Voltage V_SD I_S = 2.0A, V_GS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss V_DS = 50V, V_GS = 0V, f = 1MHz — 12205 — pF
Output Capacitance C_oss — 2542 — pF
Reverse Transfer Capacitance C_rss — 69 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 1.4 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) V_GS = 10V, V_DS = 60V — 29 — ns
Rise Time t_r I_D = 80A, R_GEN = 3.0Ω — 43 — ns
Turn-Off Delay Time t_d(off) — 68 — ns
Fall Time t_f — 41 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = 10V) Q_g V_DS = 50V, I_D = 20A — 156 — nC
Gate-Source Charge Q_gs — 54 — nC
Gate-Drain Charge Q_gd — 29 — nC
Gate Plateau Voltage V_plateau — 4.9 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time t_rr I_S = 80A, di/dt = 100 A/µs — 90 — ns
Body Diode Reverse Recovery Charge Q_rr T_J = 25°C — 211 — nC
Diode Forward Current I_S T_C = 25°C — — 374 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10us Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=60V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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