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SMT10T02AHPDC
中晶新源 SineSemi核心代理商
中低压 MOSFETPDFN5060-8L-DC
参数规格
- 封装
- PDFN5060-8L-DC
- 结构
- N
- 漏源电压 VDS
- 100 V
- 漏极电流 ID
- 209 A
- 导通电阻 RDS(ON)@10V 最大
- 2.5 mΩ
- 车规 (Y/N)
- N
- 阈值电压 VGS(th) 典型
- 3 V
- 导通电阻 RDS(ON)@10V 典型
- 2 mΩ
- 栅源电压 VGS 最大
- ±20 V
- 结温 Tj
- 175 °C
- 雪崩能量 EAS 最大
- 1000 mJ
- 输入电容 Ciss 典型
- 4818 pF
- 输出电容 Coss 典型
- 2345 pF
- 反向传输电容 Crss 典型
- 50 pF
- 总栅极电荷 Qg 典型
- 70 nC
- ESD
- No
- 最小包装量
- 5000 pcs
- 最小订购量
- 50000 pcs
- 应用推荐-马达驱动
- Y
- 应用推荐-高频电源
- Y
- 应用推荐-通用开关
- Y
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT10T02AHPDC
100V N-Channel Power MOSFET
Product Summary
| V_DS |
R_DS(ON)_TYP |
I_D_MAX |
| 100 V |
2.0 mΩ @V_GS = 10V |
209 A |
PDFN5060-8L-DC
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% ΔVDS & UIS & Rg Tested
Applications
- Motor Drives
- High-Performance Power Supplies
- Hard Switching and High Speed Circuit
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMT10T02AHPDC |
PDFN5060-8L-DC |
10T02AH |
13'' Tape&Reel |
5,000 |
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
V_DS |
100 |
V |
| Gate - Source Voltage |
V_GS |
±20 |
V |
| Continuous Drain Current (V_GS = 10V) ^(1) |
I_D @ T_C = 25°C |
209 |
A |
|
I_D @ T_C = 100°C |
147 |
A |
| Pulsed Drain Current ^(2) |
I_DM |
834 |
A |
| Single Pulse Avalanche Energy ^(3) |
E_AS |
1000 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
I_AS |
74 |
A |
| Power Dissipation |
P_D @ T_C = 25°C |
231 |
W |
|
P_D @ T_C = 100°C |
115 |
W |
| Junction & Storage Temperature Range |
T_J, T_STG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ. |
Max. |
Unit |
| Thermal Resistance, Junction-to-Ambient ^(4) |
R_θJA |
40 |
50 |
°C/W |
| Thermal Resistance, Junction-to-Case, Bottom ^(5) |
R_θJC |
0.50 |
0.65 |
°C/W |
| Thermal Resistance, Junction-to-Case, Top ^(5) |
R_θJC |
0.35 |
0.46 |
°C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = 250µA |
100 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
I_DSS |
V_DS = 100V, V_GS = 0V |
— |
— |
1.0 |
µA |
|
|
T_J = 125°C |
— |
— |
100 |
mA |
| Gate-Source Leakage Current |
I_GSS |
V_GS = ±20V, V_DS = 0V |
— |
— |
±100 |
nA |
On Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Gate Threshold Voltage |
V_GS(th) |
V_GS = V_DS, I_D = 250µA |
2.0 |
3.0 |
4.0 |
V |
| Static Drain-Source On-Resistance |
R_DS(ON) |
V_GS = 10V, I_D = 20A |
— |
2.0 |
2.5 |
mΩ |
| Forward Transconductance |
g_fs |
V_DS = 5.0V, I_D = 20A |
— |
60 |
— |
S |
| Diodes Forward Voltage |
V_SD |
I_S = 2.0A, V_GS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Input Capacitance |
C_iss |
|
— |
4818 |
— |
pF |
| Output Capacitance |
C_oss |
V_DS = 50V, V_GS = 0V, f = 1MHz |
— |
2345 |
— |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
50 |
— |
pF |
| Gate Resistance |
R_g |
V_GS = 0V, V_DS = 0V, f = 1MHz |
— |
2.3 |
— |
Ω |
Switching Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Turn-On Delay Time |
t_d(on) |
|
— |
11 |
— |
ns |
| Rise Time |
t_r |
V_GS = 10V, V_DS = 50V |
— |
20 |
— |
ns |
| Turn-Off Delay Time |
t_d(off) |
I_D = 20A, R_GEN = 3.0Ω |
— |
50 |
— |
ns |
| Fall Time |
t_f |
|
— |
26 |
— |
ns |
Gate Charge Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Total Gate Charge (V_GS = 10V) |
Q_g |
|
— |
70 |
— |
nC |
| Total Gate Charge (V_GS = 6.0V) |
Q_g |
V_DS = 50V, I_D = 20A |
— |
45 |
— |
nC |
| Gate-Source Charge |
Q_gs |
V_GS = 10V |
— |
21 |
— |
nC |
| Gate-Drain Charge |
Q_gd |
|
— |
16.3 |
— |
nC |
| Gate Plateau Voltage |
V_plateau |
|
— |
4.8 |
— |
V |
Drain-Source Diode Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Body Diode Reverse Recovery Time |
t_rr |
I_F = 20A, dI/dt = 100A/µs, |
— |
88 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Q_rr |
T_J = 25°C |
— |
254 |
— |
nC |
| Diode Forward Current |
I_S |
T_C = 25°C |
— |
— |
209 |
A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10us Single Pulse.
- Defined by design, not subject to production test, E_AS condition: T_J=25°C, V_DD=50V, V_GS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Typical Electrical and Thermal Characteristics
- Figure 1: Output Characteristics（曲线图略）
- Figure 2: Transfer Characteristics（曲线图略）
- Figure 3: On-Resistance vs. Gate-Source Voltage（曲线图略）
- Figure 4: On-Resistance vs. Drain Current and Gate Voltage（曲线图略）
- Figure 5: On-Resistance vs. Junction Temperature（曲线图略）
- Figure 6: Source-Drain Diode Forward Voltage（曲线图略）
- Figure 7: Gate Threshold Variation vs. Junction Temperature（曲线图略）
- Figure 8: Gate Charge Characteristics（曲线图略）
- Figure 9: Capacitance Characteristics（曲线图略）
- Figure 10: Power Derating（曲线图略）
- Figure 11: Current Derating（曲线图略）
- Figure 12: Safe Operating Area（曲线图略）
- Figure 13: Normalized Maximum Transient Thermal Impedance（曲线图略）
Figure 13 notes:
- δ = 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
- Duty cycle δ = t_1 / t_2
- R_θJC(t) = r(t) × R_θJC
PDFN5060-8L-DC Package Outline
Package Outline
Package Outline drawing notes:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
- ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
- DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
| DIM. |
MIN. |
NOM. |
MAX. |
| A |
0.66 |
0.71 |
0.76 |
| A1 |
0.60 |
— |
0.75 |
| A2 |
0.15 |
0.203 |
0.30 |
| b |
0.33 |
0.43 |
0.53 |
| D |
5.00 |
— |
5.30 |
| D1 |
|
5.00 Bsc |
|
| D2 |
|
2.40 Bsc |
|
| D3 |
2.80 |
3.30 |
3.80 |
| D4 |
4.06 |
4.21 |
4.36 |
| E |
6.10 |
— |
6.70 |
| E1 |
|
6.00 Bsc |
|
| E2 |
4.20 |
4.70 |
5.20 |
| E3 |
3.525 |
3.675 |
3.825 |
| E4 |
|
3.80 Bsc |
|
| K |
1.05 |
1.20 |
1.35 |
| L |
0.45 |
0.575 |
0.70 |
| L1 |
0.925 |
1.05 |
1.175 |
| θ |
|
12° Bsc |
|
| θ1 |
|
7° Bsc |
|
Units: MILLIMETER
Recommended Soldering Footprint
（封装焊盘图略；关键尺寸：总高 7.10 mm，总宽 4.60 mm，漏极焊盘 4.34 × 3.78 mm，源极引脚节距 1.27 mm，引脚宽 0.53 mm，引脚长 1.10 mm，引脚间距 0.37 mm，侧边距 0.83 mm，底部引脚偏移 0.74 mm，漏极连接宽 1.27 mm）
