产品详情
SMT10T01AHS
中晶新源 SineSemi核心代理商
中低压 MOSFETTO220-3L
参数规格
- 封装
- TO220-3L
- 结构
- N
- 漏源电压 VDS
- 100 V
- 漏极电流 ID
- 274 A
- 导通电阻 RDS(ON)@10V 最大
- 2.1 mΩ
- 阈值电压 VGS(th) 典型
- 3 V
- 导通电阻 RDS(ON)@10V 典型
- 1.7 mΩ
- 栅源电压 VGS 最大
- ±20 V
- 结温 Tj
- 175 °C
- 雪崩能量 EAS 最大
- 2016 mJ
- 输入电容 Ciss 典型
- 9660 pF
- 输出电容 Coss 典型
- 3476 pF
- 反向传输电容 Crss 典型
- 48 pF
- 总栅极电荷 Qg 典型
- 140 nC
不确定怎么选？阅读《中低压 MOSFET 选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT10T01AHS(T)
100V N-Channel Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
Package |
| 100 V |
2.1 mΩ @ VGS = 10V |
274 A |
TO263-3L |
| 100 V |
2.3 mΩ @ VGS = 10V |
|
TO220-3L |
TO220-3L / TO263-3L
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% UIS and Rg tested
- RoHS compliant, HALOGEN FREE
Applications
- DC/DC in Telecoms and Industrial
- Synchronous Rectification in SMPS
- Hard Switching and High Speed Circuit
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMT10T01AHS |
TO220-3L |
10T01AH |
Tube |
50 |
| SMT10T01AHT |
TO263-3L |
10T01AH |
13" Tape&Reel |
1,000 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
100 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID |
TA = 25°C: 274 |
A |
|
|
TA = 100°C: 194 |
A |
| Pulsed Drain Current (2) |
IDM |
1095 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
2016 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
IAS |
117 |
A |
| Power Dissipation |
PD |
TA = 25°C: 306 |
W |
|
|
TA = 100°C: 153 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
25 |
32 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
0.38 |
0.49 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
100 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 100V, VGS = 0V |
— |
— |
1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
2.0 |
3.0 |
4.0 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 20A (TO263-3L) |
— |
1.7 |
2.1 |
mΩ |
|
|
VGS = 10V, ID = 20A (TO220-3L) |
— |
1.9 |
2.3 |
mΩ |
| Forward Transconductance |
gfs |
VDS = 5.0V, ID = 20A |
— |
78 |
— |
S |
| Diodes Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 50V, VGS = 0V, f = 1MHz |
— |
9660 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
3476 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
48 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
2.0 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 50V |
— |
25 |
— |
ns |
| Rise Time |
tr |
ID = 20A, RGEN = 3.0Ω |
— |
42 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
87 |
— |
ns |
| Fall Time |
tf |
|
— |
63 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 50V, ID = 25A |
— |
140 |
— |
nC |
| Total Gate Charge (VGS = 6.0V) |
Qg |
|
— |
88 |
— |
nC |
| Gate-Source Charge |
Qgs |
VGS = 10V |
— |
38 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
27 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
4.2 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = 20A, di/dt = 100A/µs |
— |
105 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
394 |
— |
nC |
| Diode Forward Current |
IS |
TA = 25°C |
— |
— |
204 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Defined by design, not subject to production test. EAS condition, TJ=25°C, VDS=50V, VGS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to soldering point (on the exposed drain pad).
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
