产品详情

SMV13N50AHF

中晶新源 SineSemi核心代理商

高压 MOSFETTO-220F

参数规格

封装: TO-220F
结温 Tj: 150 °C
漏源电压 VDS: 500 V
漏极电流 ID: 13 A
导通电阻 RDS(ON)@10V 典型: 400 mΩ
导通电阻 RDS(ON)@10V 最大: 500 mΩ
栅源电压 VGS 最大: ±30 V
雪崩能量 EAS 最大: 562 mJ
输入电容 Ciss 典型: 1180 pF
输出电容 Coss 典型: 120 pF
反向传输电容 Crss 典型: 13 pF
总栅极电荷 Qg 典型: 32 nC

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMV13N50AHS / SMV13N50AHF

500V N-Channel MOSFET

Lead Free Package and Finish

General Features

Proprietary New Planar Technology
R_DS(on), typ =0.40 Ω@V_GS=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode

BV_DSS	R_DS(ON), typ	I_D
500V	0.40Ω	13A

Applications

ATX Power
LCD Panel Power

Ordering Information

Part Number	Package
SMV13N50AHS	TO-220
SMV13N50AHF	TO-220F

Absolute Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Symbol	Parameter	SMV13N50AHS	SMV13N50AHF	Unit
V_DSS	Drain-to-Source Voltage ^(1)	500	500	V
V_GSS	Gate-to-Source Voltage	±30	±30	V
I_D	Continuous Drain Current	13	13	A
I_DM	Pulsed Drain Current at V_GS=10V ^(4)	48	48	A
E_AS	Single Pulse Avalanche Energy	562	562	mJ
dv/dt	Peak Diode Recovery dv/dt ^(3)	5.0	5.0	V/ns
P_D	Power Dissipation	190	65	W
	Derating Factor above 25°C	1.52	0.52	W/°C
T_J & T_STG	Operating and Storage Temperature Range	-55 to 150	-55 to 150	°C

Thermal Characteristics

Symbol	Parameter	PTP13N50B	PTA13N50B	Unit
R_θJC	Thermal Resistance, Junction-to-Case	0.66	1.92	°C/W
R_θJA	Thermal Resistance, Junction-to-Ambient	62	100	°C/W

Electrical Characteristics

OFF Characteristics (T_J = 25°C, unless otherwise specified.)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
BV_DSS	Drain-to-Source Breakdown Voltage	500	—	—	V	V_GS=0V, I_D=250uA
I_DSS	Drain-to-Source Leakage Current	—	—	1	µA	V_DS=500V, V_GS=0V
		—	—	100	µA	V_DS=400V, V_GS=0V, T_J=125°C
I_GSS	Gate-to-Source Leakage Current	—	—	+100	nA	V_GS=+30V, V_DS=0V
		—	—	-100	nA	V_GS=-30V, V_DS=0V

ON Characteristics (T_J = 25°C, unless otherwise specified.)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
R_DS(on)	Static Drain-to-Source On-Resistance	—	0.40	0.50	Ω	V_GS=10V, I_D=6.0A
V_GS(th)	Gate Threshold Voltage	2.0	—	4.0	V	V_DS=V_GS, I_D=250uA
g_fs	Forward Transconductance ^(6)	—	20	—	S	V_DS=20V, I_D=13A

Dynamic Characteristics (Essentially independent of operating temperature)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
C_iss	Input Capacitance	—	1180	—	pF	V_GS=0V, V_DS=25V, f=1.0MHz
C_rss	Reverse Transfer Capacitance	—	13	—	pF
C_oss	Output Capacitance	—	120	—	pF
Q_g	Total Gate Charge	—	32	—	nC	V_DS=400V, I_D=13A, V_GS=0 to 10V
Q_gs	Gate-to-Source Charge	—	7	—	nC
Q_gd	Gate-to-Drain (Miller) Charge	—	16	—	nC

Resistive Switching Characteristics (Essentially independent of operating temperature)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
t_d(ON)	Turn-on Delay Time	—	21	—	ns	V_DD=250V, I_D=13A, V_GS= 10V, R_G=25 Ω
t_RR	Rise Time	—	13	—	ns
t_d(OFF)	Turn-Off Delay Time	—	88	—	ns
t_fall	Fall Time	—	30	—	ns

Source-Drain Body Diode Characteristics (T_J = 25°C, unless otherwise specified.)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
I_SD	Continuous Source Current ^(1)	—	—	13	A	Integral PN-diode in MOSFET
I_SM	Pulsed Source Current ^(4)	—	—	48	A
V_SD	Diode Forward Voltage	—	—	1.4	V	I_SD=13A, V_GS=0V
trr	Reverse recovery time	—	310	—	ns	V_GS=0V, I_rr=13A, di/dt=100A/µs
Qrr	Reverse recovery charge	—	4.0	—	µC

Notes:

T_J=+25°C to +150°C.
Repetitive rating, pulse width limited by maximum junction temperature.
I_SD= 13A, di/dt < 100 A/µs, VDD < BV(dss), T_J=+150°C.
Pulse width≤380µs, duty cycle≤2%.