SMJ80R360ANT 产品图

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SMJ80R360ANT

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高压 MOSFETTO263-3L

参数规格

封装
TO263-3L
结温 Tj
150 °C
漏源电压 VDS
800 V
漏极电流 ID
17 A
阈值电压 VGS(th) 典型
3.5 V
导通电阻 RDS(ON)@10V 典型
280 mΩ
导通电阻 RDS(ON)@10V 最大
360 mΩ
栅源电压 VGS 最大
±30 V
雪崩能量 EAS 最大
506 mJ
输入电容 Ciss 典型
1290 pF
输出电容 Coss 典型
47 pF
反向传输电容 Crss 典型
1.8 pF
总栅极电荷 Qg 典型
30 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMJ80R360ANT

800V Super Junction N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
800 V 360 mΩ @ VGS = 10V 17 A

TO263-3L

Features
  • Low On-Resistance
  • Fast Switching Capability
  • 100% UIS and Rg tested
  • RoHS compliant, HALOGEN FREE
Applications
  • AC/DC power supply
  • PC power
  • Telecom/Server
  • Solar invertor
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMJ80R360ANT TO263-3L 80R360AN 13" Tape&Reel 800
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 800 V
Gate - Source Voltage VGS ±30 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 17 A
TA = 125°C: 7.5 A
Pulsed Drain Current (2) IDM 51 A
Single Pulse Avalanche Energy (3) EAS 506 mJ
Single Pulse Avalanche Current (L = 50.0mH) IAS 4.5 A
Power Dissipation PD TA = 25°C: 227 W
MOSFET dv/dt Ruggedness, VDS = 0...520V — dv/dt 50
Reverse Diodes dv/dt, VDS = 0...400V, IDR < IS — dv/dt 50
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA — 62 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC — 0.55 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 800 — — V
Zero Gate Voltage Drain Current IDSS VDS = 800V, VGS = 0V — — 1.0 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 3.5 4.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 12A — 280 360 mΩ
Diodes Forward Voltage VSD IS = 5.5A, VGS = 0V — 0.81 — V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 100V, VGS = 0V, f = 250kHz — 1290 — pF
Output Capacitance Coss — 47 — pF
Reverse Transfer Capacitance Crss — 1.8 — pF
Effective Output Capacitance, Energy Related (8) Co(er) VDS = 0V... — 36 — pF
Effective Output Capacitance, Time Related (9) Co(tr) VDS = 0...500V — 133 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 5.0 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 400V — 50 — ns
Rise Time tr ID = 8A — 19 — ns
Turn-Off Delay Time td(off) RG = 5Ω — 84 — ns
Fall Time tf — 9.0 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 640V, ID = 6.0A — 30 — nC
Gate-Source Charge Qgs — 4.0 — nC
Gate-Drain Charge Qgd Qg = 0...10V — 9.6 — nC
Gate Plateau Voltage Vplateau — 5.7 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 6.0A, di/dt = 100A/µs, VR = 650V — 226 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 3.1 — µC
Body Diode Reverse Recovery Current IRRM — 26 — A
Diode Forward Current IS TA = 25°C — — 17 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. TJ=25°C, VDS=18V, VGS=10V, L=4.5A.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to soldering point (on the exposed drain pad).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
  8. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
  9. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
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