Specifications
- Package
- PDFN5060-8L
- Configuration
- N
- VDS_Max
- 60 V
- ID
- 220 A
- RDS(ON)_Max @VGS=10V
- 1.5 mΩ
- Automotive (Y/N)
- N
- VGS(th)_Typ
- 1.7 V
- RDS(ON)_Typ @VGS=10V
- 1.3 mΩ
- RDS(ON)_Typ @VGS=4.5V
- 1.4 mΩ
- RDS(ON)_Max @VGS=4.5V
- 1.8 mΩ
- VGS_Max
- ±20 V
- Tj
- 150 °C
- EAS_Max
- 462 mJ
- Ciss_Typ
- 4898 pF
- Coss_Typ
- 2506 pF
- Crss_Typ
- 95 pF
- Qg_Typ
- 91 nC
- ESD
- No
- MPQ
- 5000 pcs
- MOQ
- 50000 pcs
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT6001ALP
60V N-Channel Power MOSFET
Product Summary
| V_DS |
R_DS(ON), max |
I_D, max |
| — V |
1.5 mΩ @ V_GS = 10V |
220 A |
PDFN5060-8L
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Units |
| Drain - Source Voltage |
V_DS |
60 |
V |
| Gate - Source Voltage |
V_GS |
±20 |
V |
| Continuous Drain Current (V_GS = 10V) ^(1) |
I_D @ T_C = 25°C |
220 |
A |
|
I_D @ T_C = 100°C |
139 |
A |
| Pulsed Drain Current ^(2) |
I_DM |
881 |
A |
| Single Pulse Avalanche Energy ^(3) |
E_AS |
462 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
I_AS |
77 |
A |
| Power Dissipation |
P_D @ T_C = 25°C |
125 |
W |
|
P_D @ T_C = 100°C |
50 |
W |
| Junction & Storage Temperature Range |
T_J, T_STG |
-55~+150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient ^(4) |
R_θJA |
33 |
42 |
°C/W |
| Thermal Resistance, Junction-to-Case ^(5) |
R_θJC |
0.77 |
1.0 |
°C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = 250µA |
60 |
— |
— |
V |
|
|
V_DS = 60V, V_GS = 0V |
— |
— |
1.0 |
µA |
| Zero Gate Voltage Drain Current |
I_DSS |
T_J = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
I_GSS |
V_GS = ±20V, V_DS = 0V |
— |
— |
±100 |
nA |
On Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
V_GS(th) |
V_GS = V_DS, I_D = 250µA |
1.2 |
1.7 |
2.5 |
V |
| Static Drain-Source On-Resistance |
R_DS(on) |
V_GS = 4.5V, I_D = 15A |
— |
1.4 |
1.8 |
mΩ |
| Static Drain-Source On-Resistance |
R_DS(on) |
V_GS = 10V, I_D = 20A |
— |
1.3 |
1.5 |
mΩ |
| Forward Transconductance |
g_fs |
V_DS = 5.0V, I_D = 20A |
— |
71 |
— |
S |
| Diodes Forward Voltage |
V_SD |
I_S = 2.0A, V_GS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
C_iss |
|
— |
4898 |
— |
pF |
| Output Capacitance |
C_oss |
V_DS = 30V, V_GS = 0V, f = 1MHz |
— |
2506 |
— |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
95 |
— |
pF |
| Gate Resistance |
R_g |
V_GS = 0V, V_DS = 0V, f = 1MHz |
— |
1.4 |
— |
Ω |
Switching Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Delay Time |
t_d(on) |
|
— |
6.3 |
— |
ns |
| Rise Time |
t_r |
V_DS = 30V, V_GS = 10V |
— |
13 |
— |
ns |
| Turn-Off Delay Time |
t_d(off) |
I_D = 20A, R_GEN = 3.0Ω |
— |
91 |
— |
ns |
| Fall Time |
t_f |
|
— |
40 |
— |
ns |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge (V_GS = 10V) |
Q_g |
|
— |
91 |
— |
nC |
| Total Gate Charge (V_GS = 4.5V) |
Q_g |
|
— |
46 |
— |
nC |
| Gate-Source Charge |
Q_gs |
V_DS = 30V, I_D = 20A |
— |
11.7 |
— |
nC |
| Gate-Drain Charge |
Q_gd |
|
— |
19 |
— |
nC |
| Gate Plateau Voltage |
V_plateau |
|
— |
2.6 |
— |
V |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Reverse Recovery Time |
t_rr |
I_S = 20A, di/dt = 100A/µs |
— |
67 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Q_rr |
T_J = 25°C |
— |
133 |
— |
nC |
| Diode Forward Current |
I_S |
T_J = 25°C |
— |
— |
220 |
A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10μs Single Pulse.
- Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=30V, VGS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed drain pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
