SMT4001AHTL product image

Product Detail

SMT4001AHTL

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTOLL
Download Datasheet

Specifications

Package
TOLL
Configuration
N
VDS_Max
40 V
ID
356 A
RDS(ON)_Max @VGS=10V
1.2 mΩ
Automotive (Y/N)
N
VGS(th)_Typ
3 V
RDS(ON)_Typ @VGS=10V
0.95 mΩ
VGS_Max
±20 V
Tj
175 °C
EAS_Max
960 mJ
Ciss_Typ
5654 pF
Coss_Typ
3337 pF
Crss_Typ
99 pF
Qg_Typ
73 nC
ESD
No
MPQ
2000 pcs
MOQ
20000 pcs
App: Motor Drive
Y
App: HF Power
Y
App: Battery Protection
Y
App: General Switch
Y

Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →

Package & Schematic

SMT4001AHTL package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT4001AHTL

40V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
40 V 1.2 mΩ @ VGS = 10V 356 A

TOLL

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT4001AHTL TOLL 4001AH 13'' Tape&Reel 2,000
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 40 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TC = 25°C 356 A
ID @ TC = 100°C 252 A
Pulsed Drain Current (2) IDM 1424 A
Single Pulse Avalanche Energy (3) EAS 960 mJ
Single Pulse Avalanche Current (L = 0.3mH) IAS 53 A
Power Dissipation PD @ TC = 25°C 254 W
PD @ TC = 100°C 127 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 26 33 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.45 0.59 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 — — V
Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 80A — 0.95 1.2 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 63 — S
Diode Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss — 5654 — pF
Output Capacitance Coss VDS = 20V, VGS = 0V, f = 1MHz — 3337 — pF
Reverse Transfer Capacitance Crss — 99 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 2.1 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) — 4.4 — ns
Rise Time tr VGS = 10V, VDS = 20V — 21 — ns
Turn-Off Delay Time td(off) ID = 80A, RGEN = 3.0Ω — 40 — ns
Fall Time tf — 19 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 20V, ID = 80A — 73 — nC
Total Gate Charge (VGS = 7.0V) Qg — 52 — nC
Gate-Source Charge Qgs VGS = 10V — 23 — nC
Gate-Drain Charge Qgd — 12.2 — nC
Gate Plateau Voltage Vplateau — 4.5 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IF = 20A, dI/dt = 100A/s — 72 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 110 — nC
Diode Forward Current IS TC = 25°C — — 356 A

Notes:

  1. This current is chip limited, which is calculated based on R_θJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design; not subject to production test.
  4. Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
SMT4001AHTLQID356 APackageTOLLSMT400SAHSTQID353 APackagesTOLLSMT400SAHFP5QID362 APackageLFPAK5060SMT400SAHPDCID367 APackagePDFN5060-8L-DCSMT400SAHFP5ID345 APackageLFPAK5060SMT400SALPQID342 ARDS(ON)_Max @VGS=10V0.8 mΩ