Specifications
- Package
- TO263-7L
- Configuration
- N
- VDS_Max
- 100 V
- ID
- 240 A
- RDS(ON)_Max @VGS=10V
- 2.1 mΩ
- Automotive (Y/N)
- N
- VGS(th)_Typ
- 3 V
- RDS(ON)_Typ @VGS=10V
- 1.8 mΩ
- VGS_Max
- ±20 V
- Tj
- 150 °C
- EAS_Max
- 2016 mJ
- Ciss_Typ
- 6848 pF
- Coss_Typ
- 1416 pF
- Crss_Typ
- 49 pF
- Qg_Typ
- 91 nC
- ESD
- No
- MPQ
- 800 pcs
- MOQ
- 4000 pcs
- App: Motor Drive
- Y
- App: HF Power
- Y
- App: General Switch
- Y
Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT10T02BHT7
100V N-Channel Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 100 V |
2.1 mΩ @ VGS = 10V |
240 A |
TO263-7L
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% ΔVDS & UIS & Rg Tested
Applications
- High Performance Power Supplies
- Motor Drives
- Hard Switching and High Speed Circuit
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMT10T02BHT7 |
TO263-7L |
10T02BH |
13'' Tape&Reel |
800 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
100 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID |
TC = 25°C: 240 |
A |
|
|
TC = 100°C: 152 |
A |
| Pulsed Drain Current (2) |
IDM |
962 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
1210 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
IAS |
88 |
A |
| Power Dissipation (4) |
PD |
TC = 25°C: 227 |
W |
|
|
TC = 100°C: 91 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55~+150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
29 |
36 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
0.42 |
0.55 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
100 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 100V, VGS = 0V |
— |
— |
1.0 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
2.0 |
3.0 |
4.0 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 20A |
— |
1.8 |
2.1 |
mΩ |
| Forward Transconductance |
gfs |
VDS = 5.0V, ID = 20A |
— |
53 |
— |
S |
| Diode Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 50V, VGS = 0V, f = 1MHz |
— |
6848 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
1416 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
49 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
1.5 |
— |
Ω |
Switching Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 50V |
— |
17 |
— |
ns |
| Rise Time |
tr |
ID = 20A, RGEN = 3.0Ω |
— |
26 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
53 |
— |
ns |
| Fall Time |
tf |
|
— |
33 |
— |
ns |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 50V, ID = 20A |
— |
91 |
— |
nC |
| Total Gate Charge (VGS = 6.0V) |
Qg |
VDS = 50V, ID = 20A |
— |
58 |
— |
nC |
| Gate-Source Charge |
Qgs |
|
— |
25 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
18 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
4.2 |
— |
V |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = 20A, di/dt = 100A/µs |
— |
69 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
117 |
— |
nC |
| Diode Forward Current |
IS |
TC = 25°C |
— |
— |
240 |
A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10us Single Pulse.
- Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=50V, VGS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
